V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine



A.I. Vlasenko, V.P. Veleschuk, M.P. Kisselyuk, Z.K. Vlasenko, I.O. Lyashenko, O.V. Lyashenko. Acoustic emission of the light emitting diodes (review)


A.V. Sukach, V.V. Tetyorkin, I.M. Matiyuk, A.I. Tkachuk. InAs photodiodes (review)



V.A. Danko, I.Z. Indutnyy, M.V. Lukaniuk, V.I. Mynko, S.S. Ponomarjov, P.E. ShepeliavyiV.O.Yukhymchuk. 

Photolithography on photostimulated reversible and transient structural changes in CHG



Ya.Ya. Kudryk. Methods for creation and properties of ohmic contacts to indium phosphide (rewiev)



P.I. Baranskii, G.P. Gaidar. Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation



A.P. Paiuk, A.Yu. Meshalkin, A.V. Stronski, E.A. Achimova, S.A. Sergeev, V.G. Abashkin, O.S. Lytvyn, P.F. Oleksenko, A.M. Prisacar, G.M. Triduh, E.V. Senchenko. E-beam and holographic recording of surface relief structures by using the Ge5As37A58–se multilayer nanostructures as registering media



S.P. Rudenko, M.O. Stetsenko, I.M. Krishchenko, L.S. Maksimenko, E.B. Kaganovich, B.K. Serdega. Diagnostic of localized surface plasmon resonances on porous gold films



G.P. Malanych, V.M. Tomashik, I.B. Stratiychuk, Z.F. Tomashik. Chemical etching of PbTe and Pb1–xSnxTe single crystals by using H2O2–HBr solutions with different initial HBr concentrations



E.V. Kostyukevich, S.A. Kostyukevich, A.A. Kudryavtsev, N.L. Moskalenko. Analysis of changes in optical characteristics of polycrystalline gold films under the influence of low-temperature annealing



V.A. Danko, M.L. Dmytruk, I.Z. Indutnyy, S.V. Mamykin, V.I. Mynko, P.M. Lytvyn, M.V. Lukaniuk, P.E. Shepeliavyi. Formation of submicron periodic plasmon structures of large area by using the interference lithography method with vacuum photoresists



R.V. Khristosenko, Ye.V. Kostyukevich, Yu.V. Ushenin, A.V. Samoylov. Improvement of exploitation parameters of transducers based on surface plasmon resonance via optimization of optical parts in sensor devices of the “plasmon” type



V.F. Onyshchenko. Distribution of non-equilibrium charge carriers in macroporous silicon structure under conditions of their homogeneous generation over the simple bulk



S.V. Svechnikov. To the 50th issue of “Optoelectronics and Semiconductor Technique”