V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine

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Laboratory of Laser Spectroscopy of Semiconductors and Dielectrics

Head of Laboratory

Prof. Tarasov Georgy

tel.: +380 44 525-64-72

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Staff

Kulish Mykola

Doctor of Physical and Mathematical science

tel.: +380 44 525-62-82

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Lavoryk Sergii

Ph.D., Researcher

tel.: +380 44 525-64-72

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Zhuchenko Zoriana

Ph.D., Senior Researcher

tel.: +380 44 525-64-72

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Kurlov Sergii

Researcher

н.с.

tel.: +380 44 525-64-72

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Golovynskiy Sergii

Ph.D., Senior Researcher

tel.: +380 44 525-82-40

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Virko Sergii

Ph.D., Senior Researcher

tel.: +380 44 525-82-04

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Ulianov Volodymyr

Engineer

tel.: +380 44 525-62-82

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Yeshan Iryna

Engineer

tel.: +380 44 525-62-82

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Sonko Tetiana

Engineer

tel.: +380 44 525-84-72

 

 

Alenichev Volodymyr

Engineer

tel.: +380 44 525-84-72

Fields of research

The main directions of scientific and technical activity of Department:

Physics and Optics of semiconductors and nanoscale structures, multilayer thin films and heterostructures, quantum size effects, devices based on surface-sensitive effects (solar photovoltaic cells, photodetectors, photoresistors). The study of nonlinear optical phenomena and polarization at the presence of saturation of absorption in uniaxial nano- and monocrystals. Development and study of the parameters of dye lasers, optical diagnostics of the parameters of nanocrystals.

Group 1

  • Theory of semiconductors and nano-objects;
  • Study of optical and electrical properties of bulk semiconductors and semiconductor nanostructures, quantum wells, quantum dots, quantum wires, hybrid nano-objects;
  • Study of photoluminescence, photoconductivity and conductivity of semiconductor heterostructures;
  • Femto-second time-domain optical polarimetry and microscopy of the induced absorption of exciton excitations in multilayer heterostructures;
  • Optical study of deep levels in semiconductor heterostructures: thermoinduced conductivity (TSP), photoconductivity DC;
  • Surface phenomena and doping in heterostructures for nanoelectronics;
  • Nonlinear optical phenomena in heterostructures;
  • Dynamics of charge carriers in heterostructures.

Group 2

  • Study of optical and electrical properties of bulk and nanoscale semiconductors;
  • Investigation of linear and nonlinear optical properties (absorption, luminescence, spontaneous and stimulated Raman scattering, absorption saturation, photoconductivity) of bulk and nanoscale semiconductors;
  • Development and study of parameters of dye lasers;
  • Study of nonlinear optical phenomena in nano- and monocrystals;
  • Study of light polarization in the presence of saturation of absorption in uniaxial nano- and monocrystals;
  • Optical diagnostics of parameters of nanocrystals.

Universities and institutions cooperating with the department:

  • Taras Shevchenko National University of Kyiv;
  • Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, USA;
  • California NanoSystems Institute and Electrical Engineering Department, University of California at Los Angeles, Los Angeles, USA;
  • Department of Electrical Engineering, Arizona State University, Tempe, Arizona, USA;
  • School of Electrical and Computer Engineering, Oklahoma State University, Stillwater, Oklahoma, USA;
  • Homer L. Dodge Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma, USA;
  • Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Berlin, Germany;
  • Max-Planck-Institut fur Mikrostrukturphysik, Halle, Germany;
  • Institute of Physics, Carl von Ossietzky University, Oldenburg, Germany;
  • Leibniz-Institute for Crystal Growth, Berlin, Germany;
  • Department of Physics, Humboldt-Universitat zu Berlin, Berlin, Germany;
  • Institut fur Physik, Technische Universitat Ilmenau, Ilmenau, Germany;
  • Ferdinand-Braun-Institut fur Hochstfrequenztechnik, Berlin, Germany;
  • Institut fur Physik, Universitat Potsdam, Potsdam, Germany;
  • Institut fur Festkorperphysik, Technische Universitat Berlin, Berlin, Germany;
  • Department of Electrical and Computer Engineering, University of Victoria, Victoria, Canada;
  • V. Fock Institute of Physics, St. Petersburg State University, Petrodvorets, Russia;
  • Ioffe Physico-Technical Institute, RAS, St. Petersburg, Russia;
  • Departamento de Fisica, Universidade Federal de Sao Carlos, Sao Paulo, Brazil.
  • Achievements

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    Developments

    under construction ...

    Equipments

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    Projects

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    Publications

    2017

    1. S.Golovynskyi, L.Seravalli, O.Datsenko, G.Trevisi, P.Frigeri, E.Gombia, I.Golovynska, S.V.Kondratenko, J.Qu, T.Y.Ohulchanskyy, Comparative study of photoelectric properties of metamorphic InAs/InGaAs and InAs/GaAs quantum dot structures // Nanoscale Research Letters, 2017, V.12, P.335.

    2016

    1. M.R.Kulish, V.M.Litvinova, M.I.Malysh, I.O.Sokolovskyi, Temperature effect on light polarization in uniaxial crystals // Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V.19, N1. P. 44-46.
    2. M.R.Kulish, V.P.Kostylyov, A.V.Sachenko, I.O.Sokolovskyi , D.V.Khomenko, A.I.Shkrebtii, Luminescent converter of solar light into electrical energy. Review // Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, V.19, N3. P.229-247.
    3. V.A.Ievtukh, V.V.Ulyanov, A.N.Nazarov, The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures // Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V.19, N1, P.116-123.
    4. A.M.Yaremko, Yu.A.Romanyuk, V.O.Yukhymchuk, S.V.Virko, Theoretical and experimental study of Raman scattering in mixed (MoS2)x(MoSe2)1-x layered crystals”// Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, V.18, N3. P.354-361.
    5. А.П.Бурлака, І.І.Ганусевич, В.В.Голотюк, А.В.Вовк, С.М.Лукін, С.В.Вірко, Взаємозв’язок супероксид- та NO-генеруючої активності нейтрофілів хворих на рак прямої кишки з клінічними характеристиками та вплив на віддалені результати комбінованого лікування // Онкология, 2016, Т.18, N4, С.1-6.
    6. S.S.Kurlov, Y.V.Flores, M.Elagin, M.P.Semtsiv, L.Schrottke, H.T.Grahn, G.G.Tarasov, W.T.Masselink, Phenomenological scattering-rate model for the simulation of the current density and emission power in mid-infrared quantum cascade lasers // Journal of Applied Physics, 2016, V.119, P.134501-7.
    7. S.L.Golovynskyi, O.I.Dacenko, S.V.Kondratenko, S.R.Lavoryk, Yu.I.Mazur, Zh.M.Wang, M.E.Ware, G.G.Tarasov, G.J.Salamo, Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures // Journal of Applied Physics, 2016, V.119, P.184303-7.
    8. Yu.I.Mazur, V. G.Dorogan, L.Dias, D.Fan, M.Schmidbauer, M.E.Ware, Z.Ya.Zhuchenko, S.S.Kurlov, G.G.Tarasov, S.-Q.Yu, G.E.Marques, G.J.Salamo, Luminescent properties of GaAsBi/GaAs double quantum well heterostructures // Journal of Luminescence, 2016, V.188, P.209-216.
    9. Yu.I.Mazur, M.Teodoro, Benito Alen, V.Lopez-Richard ,M.E.Ware, E.Marega Jr., Z.Ya.Zhuchenko, G.G.Tarasov, G.J.Salamo, Polarized magnetophotoluminescence of single InGaAs/GaAs quantum well // Journal of Applied Physics, 2016.
    10. S.L.Golovynskyi, L.Seravalli, O.I.Dacenko, G.Trevisi, P.Frigeri, E.Gombia, S.V.Kondratenko, Comparison study of the metamorphic InAs/InGaAs and InAs/GaAs quantum dot structure photoelectric properties // Journal of Applied Physics, 2016.

    2015

    under construction ...