V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine


Laboratory of optical submicron spectroscopy




prof. Viktor Strelchuk

phone: +38(044) 525-64-73

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Oleksandr Kolomys

Ph.D., senior researcher

phone: +38(044) 525-64-73

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Andrii Nikolenko

Ph.D., senior researcher 

phone: +38(044) 525-64-73

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Yurii Nasieka

Ph.D., senior researcher

phone: +38(044) 525-64-73

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Vitalii Boiko

Ph.D., senior researcher

phone: +38(044) 525-60-53, вн.: 6-51

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 stubrov Yurii Stubrov


phone: +38(044) 525-64-73

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Bogdan Tsykaniuk


phone: +38(044) 525-64-73, вн.: 2-92

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Rarata Serhii


phone: +38(044) 525-64-73

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Laboratory capabilities:

  • Raman and luminescence microanalysis of emitting properties, structure, chemical composition, electronic and phonon excitations in solids, physicochemical characteristics of semiconductors, chemical compounds and nanostructures for modern micro-, nano- and optoelectronics with submicron spatial resolution.
  • Raman and fluorescent 2D-3D spatial mapping: deformations and chemical composition; temperature (thermography) concentration and mobility of charge carriers; optical radiation of nanostructures;
  • Optical low-temperature studies of phonon, plasmon-phonon, electronic excitations, radiative recombination of charge carriers in condensed systems.

Main directions of activity:

  • support of state, regional and international initiative projects and programs of scientific teams;
    diagnostic support of high technologies and high technology production;
  • scientific and methodological support of research of students, graduate students and doctoral students;
  • development of an integrated approach to solving interdisciplinary problems of fundamental, applied, intersectoral science and industry.
  • development of an complex approach to solving interdisciplinary problems of fundamental, applied, intersectoral science and industry.


Triple spectrometer Horiba Jobin-Yvon T64000 (France) 

  • Optical range: 300 – 1700 nm; 
  • Spectral resolution up to: 0,15 cm-1
  • Three configurations:
    • triple aditive mode to achieve high resolution (< 0.15 cm-1); 
    • triple substractive mode for low-frequency measurements (< 5 cm-1); 
    • single mode for high throughput.

Confocal microscope UV-Visible-NIR Olympus BX41 (Japan) 

  Set of optical objectives:
  • MPlan N 10x/0.25 visible
  • MPlan N 50x/0.75 visible 
  • MPlan N 100x/0.9 visible
  • LMPlanFL N 50x/0.5 long working distance, visible
  • HCX PL FLUOSTAR L 50x/0.55 long working distance, NIR 
  • LMU 40x NUV
  • LMU 15x long working distance, NUV



XYZ motorized stage (Marghauser SensoTech GmbH, Німеччина)

  •  computer-controled
  •  scanning step 100 nm
  •  automated XYZ mapping 

Macrochamber with 90º - geometry 



CCD detectors: Si (Andor), InGaAs (Horiba Jobin Yvon)

  • CCD TE-1024x256, Andor (200÷1050нм) 
  • Symphony InGaAs detector LN-IGA-512x1, Horiba Jobin Yvon (800÷1550нм)




Lasers: Ar-Kr Stabilite 2018-RM Spectra Physics 2.5W (USA), HeCd, Garnet LCM-DTL-374QT, Spectra-Physics DPSS 532 nm.

  • Ar-Kr лазер Stabilite 2018-RM Spectra Physics 2.5W (USA) (454.5 nm, 457.9 nm, 476.5 nm, 488.0 nm, 496.5 nm, 514.5 nm, 520.8 nm, 530.9 nm, 568.2 nm, 647.1 nm)
  • HeCd лазер (325 nm)
  • Garnet LCM-DTL-374QT (355 nm)
  • Spectra-Physics Excelsior DPSS 532 nm, 150 mW.




Optical micro-cryostat RC102-CFM (CIA CRYO Industries, США)

  • low vibations ≤15 nm, 
  • temperature range Т = 3.5 ÷ 325 К



Micro-thermoelectri cell Linkam Scientific Instruments THMS600 (Англія) 

  • temperature range Т = 78 ÷ 600 K



FTIR spectrometer Bruker Vertex 70V (Germany) 

  • Spectral range 12500 ÷ 50 cm-1;
  • Optical transmisіion, difuce and specular reflectance, ATR and emission spectroscopy;
  • Optical liquid helium and liquid nitrogen cryostats for temperature-dependent measurements in the temperature range 3.5 ÷ 500 К;
  • Detectors: wide-range liquid nitrogen cooled MCT and DLaTGS.

External PL module for Bruker Vertex 70V (Ukraine) 

  • Vaccumized housing;
  • Adaptation to liquid helium and liquid nitrogen cryostats for temperature-dependent measurement in the range of 3,5 ÷ 500 К;
  • Spectra-Physics DPSS 532 nm 150 mW laser for excitation. 





List of finished competitive projects:

  • SFFR project F36/410-2012 "Submicron optical spectroscopy of phonon and plasmon-phonon excitations in semiconductor nanomaterials and device heterostructures" (2012);
  • SFFR project F38/363 "Development and study of physical properties of the latest semiconductor nanostructures with resonant interaction of plasma and phonon excitations" (2011-2012);
  • Ukrainian-French program “Dnipro” MES M/407 and M/243 “Sensors for detection of toxic molecules” (2011-2012).
  • SFFR project F44/401-2012 "Study of phonon, electronic and magnetic excitations in ZnO: Co (Mn) and CdTe nanostructures for spintronics and optical sensors" (2012);
  • NASU project "Development and development of methods of submicron topography and certification of chemical composition, structural perfection, electrophysical parameters and distribution of mechanical stresses in nanostructures of electronics and optoelectronics" of the State target scientific and technical program "Nanotechnologies and nanomaterials";
  • innovative project of NASU #16 “Development and implementation of the latest methods of surface-enhanced cattle and nanomechanical spectroscopy for physical diagnostics of bioimplants and other biomedical applications” (2014);
  • NATO Grant 984735 “Novel nanostructures for security application” (2015-2017);
  • SFFR project F64/6832 "Fluorescent imaging and SERS diagnostics of modern biologically active drugs with nanoparticles" (2015-2016);
  • SFFR project F64/16 "Hybrid composites based on carbon nanomaterials and functionalized oxides for efficient storage and saving of electricity" (2015-2016);
  • MES project M/218-2015 "Latest nanostructures for security systems" (2015);
  • STCU project 6175 "Graphene-like materials and nanocomposites based on them: mechanochemical production, structure, properties, functional use" (2016-2018);
  • SFFR project F76/100 "Latest LED heterostructures based on n-ZnO nanostructures and p-GaN epitaxial layers for highly efficient ultraviolet radiation sources and energy-saving lighting systems", 2017-2018;
  • NATO G5140 grant “Advanced NanoTechnologies For Multivariate Sensor Fabrication” (2018-2019);
  • young scientists SFFR project F83/72 “Structural, electronic and optical properties of gallium nitride with functional cationic complexes Mn-Mgk and iron centers” (2018).
  • bilateral Ukrainian-Polish project of MES #M/138-2018 and #M/43-2019 "Influence of solvent metals on the optical and structural properties of GaN single crystals obtained by crystallization from solution in transition metals (Fe, Co, Cr) under conditions of high temperature and high pressure» (2018-2019).



    1. Methane as a novel doping precursor for deposition of highly conductive ZnO thin films by magnetron sputtering / A.V. Vasin, A.V. Rusavsky, E.G. Bortchagovsky, Y.V. Gomeniuk, A.S. Nikolenko, V.V. Strelchuk, R. Yatskiv, S. Tiagulskyi, S. Prucnal, W. Skorupa, A.N. Nazarov //Vacuum 174, 109199 (2020).
    2. Influence of the multiwall carbon nanotubes on the thermal properties of the Fe–Cu nanocomposites / M.C. Bouleklab, S. Hamamda,Y. Naouia, S. Nedilko, T. Avramenko, K. Ivanenko, S. Revo, P.Teselko, V.Strelchuk, A. Nikolenko //Journal of Alloys and Compounds 816, 152525 (2020).
    3. Plasma Enhanced Chemical Vapor Deposition synthesis of graphene-like structures from plasma state of CO2gas / M.Ye. Svavil’nyi, V.Ye. Panarin, A.A. Shkola, A.S. Nikolenko, V.V. Strelchuk //Carbon 167, 132-139 (2020).
    4. Graphitic Nanoporous Carbon Thin Films: Fabrication Method, Structural, Electrical and Gas Sensor Properties / O. M. Slobodian, Y. V. Gomeniuk, A. V. Vasin, A. V. Rusavsky, P.N. Okholin, O.Yo. Gudymenko, Oleg Yu Khyzhun, A. Nikolenko, P. Lytvyn, A. Korchovyy //ECS Trans. 97,151 (2020).
    5. Specific interactions and charge transport in ternary PVDF/polyaniline/MWCNT nanocomposite films / R.M. Rudenko, O.O. Voitsihovska, V.M. Poroshin, M.V. Petrychuk, S.P. Pavlyuk, A.S. Nikolenko, N.A. Ogurtsov, Yu.V. Noskov, D.O. Sydorov, A.A. Pud //Composites Science and Technology 198, 108284 (2020).
    6. New nanostructured apatite-type (Na+,Zn2+,CO32−)-doped calcium phosphates: Preparation, mechanical properties and antibacterial activity / Nataliia Strutynska, Oksana Livitska, Svitlana Prylutska, Yuliia Yumyna, Pavlina Zelena, Larysa Skivka, Anna Malyshenko, Lyudmyla Vovchenko, Viktor Strelchuk, Yuriy Prylutskyy, Nikolai Slobodyanik, Uwe Ritter //Journal of Molecular Structure 1222, 128932 (2020).
    7. Raman and Photoluminescence Study of Al,N‐Codoped ZnO Films Deposited at Oxygen‐Rich Conditions by Magnetron Sputtering / Vitalii Karpyna, Arsenii Ievtushenko, Oleksandr Kolomys, Oksana Lytvyn, Viktor Strelchuk, Vasily Tkach, Sergii Starik, Vladimir Baturin, Oleksandr Karpenko //Physica Status Solidi (b) 257, 6, 1900788 (2020).
    8. Influence of microwave radiation on relaxation processes in silicon carbide / Yu. Bacherikov, V.Yu. Goroneskul, O. Yo. Gudymenko, V.P. Kladko, O.F. Kolomys, I.M. Krishchenko, O.B. Okhrimenko, V.V. Strelchuk //Semiconductor Physics, Quantum Electronics & Optoelectronics 23, 2, 175-179 (2020).
    9. Experimental and modeling study of charge carriers release from traps by interaction with molecular vibrations in silicon organic polymers / Volodymyr Sugakov, Nina Ostapenko, Yurij Ostapenko, Olga Kerita, Viktor Strelchuk, Olexander Kolomys //Molecular Crystals and Liquid Crystals 697, 1, 68-84 (2020).
    10. Transformations in the photoluminescent, electrical and structural properties of Tb3+ and Eu3+ co-doped ZnO films under high-temperature annealing / Author links open overlay panel / N. Korsunska, L. Borkovska, L. Khomenkova, O. Gudymenko, V. Kladko, O.Kolomys, V. Strelchuk, Z. Tsybrii, C. Guillaume, C. Labbe, X. Portier, O. Melnichuk, L. Melnichuk //Journal of Luminescence 217, 116739 (2020).
    11. Modification of elastic deformations and analysis of structural and optical changes in Ar+-implanted AlN/GaN superlattices / Oleksii Liubchenko, Tomash Sabov, Vasyl Kladko, Viktor Melnik, Volodymyr Yukhymchuk, Borys Romanyuk, Oleksandr Kolomys, Oleksandr Hreshchuk, Oleksandr Dubikovskyi, Zoia Maksimenko, Oleksandr Gudymenko, Alexander Belyaev //Applied Nanoscience 10, 2479–2487 (2020).


    1. Physical properties of Ga-Fe-N system relevant for crystallization of GaN – initial studies / B. Sadovyi, P. Sadovyi, I. Petrusha, I. Dziecielewski, S. Porowski, V. Turkevich, A. Nikolenko, B. Tsykaniuk, V. Strelchuk, I. Grzegory // Journal of Crystal Growth507,77–86 (2019).
    2. The effect of Zn3N2 phase decomposition on the properties of highly-doped ZnO:Al,N films / A. Ievtushenko, O. Khyzhun, V. Karpyna, O. Bykov, V. Tkach, V. Strelchuk, O. Kolomys, S. Rarata, V. Baturin, О. Karpenko, G. Lashkarev // Thin Solid Films 669, 605–612 (2019).
    3. Photoluminescence, conductivity and structural study of terbium doped ZnO films grown on different substrates / N. Korsunska, L. Borkovska, Y. Polischuk, O. Kolomys, P. Lytvyn, I. Markevich, V Strelchuk, V. Kladko, O. Melnichuk, L. Melnichuk, L. Khomenkova, C. Guillaume, X. Portier // Materials Science in Semiconductor Processing 94, 51–56 (2019).
    4. Influence of annealing on luminescence and energy transfer in ZnO multilayer structure co-doped with Tb and Eu / L.V. Borkovska, L. Khomenkova, O. Korsunska, O. Kolomys, V. Strelchuk, T. Sabov, E. Venger, T. Kryshtab, O. Melnichuk, L. Melnichuk, C. Guillaume, C. Labbe, X. Portier // Thin Solid Films 692, 137634 (2019).
    5. Modification of elastic deformations and analysis of structural and optical changes in Ar+-implanted AlN/GaN superlattices / O. Liubchenko, T. Sabov, V. Kladko, V. Melnik, V. Yukhymchuk, B. Romanyuk, O. Kolomys, O. Hreshchuk, O. Dubikovskyi, Z. Maksimenko, O. Gudymenko, A. Belyaev // Applied Nanoscience 9 (3), 1–9 (2019).
    6. Atomic force microscopy and Raman spectroscopy of Pb1−xSnxTe surfaces polished after treatment with H2O2–HBr–ethylene glycol etchants / G.P. Malanych, O.F. Kolomys, A.A. Korchovyi, N.V. Safriuk, V.M. Tomashyk // Applied Nanoscience 9 (2), 1–6 (2019).
    7. Electrochemical Synthesis Partially Unzipped Multi-Walled Carbon Nanotubes as Electrode Materials for Fuel Cells / M.O. Danilov, I.A. Rusetskii, G.I. Dovbeshko, A.S. Nikolenko, S.S. Fomanyuk, G.Ya. Kolbasov // ECS Transactions 95 (1), 273–282 (2019).
    8. Mechanochemical synthesis of carbon-stabilized Cu/C, Co/C and Ni/C nanocomposites with prolonged resistance to oxidation / Mariia Galaburda, Evgeniya Kovalska, Benjamin T. Hogan, Anna Baldycheva, Andrii Nikolenko, Galina I. Dovbeshko, Olena I. Oranska, Viktor M. Bogatyrov // Scientific Reports 9, 17435 (2019).
    9. Highly porous carbon films fabricated by magnetron plasma enhanced chemical vapor deposition: Structure, properties and implementation / O.M. Slobodian, A.V. Rusavsky, A.V. Vasin, O.Yu. Khyzhun, O.I. Gudymenko, V.P. Kladko, A.S. Nikolenko, B.I. Tsykaniuk, P.M.Lytvyn, Yu.V. Gomeniuk, O.M. Fesenko, A.N. Nazarov // Applied Surface Science 496, 143735 (2019).
    10. Resonance Raman Spectroscopy of Mn-Mgk Cation Complexes in GaN / Andrii Nikolenko, Viktor Strelchuk, Bogdan Tsykaniuk, Dmytro Kysylychyn, Giulia Capuzzo, Alberta Bonanni // Crystals 9, 235 (2019).
    11. In-situ Raman study of laser-induced stabilization of reduced nanoceria (CeO2-x) supported on graphene / A. Nikolenko, V. Strelchuk, O. Gnatyuk, P. Kraszkiewicz, V. Boiko, E. Kovalska, W. Mista, R. Klimkiewicz, V. Karbivskii, G. Dovbeshko // Journal of Raman Spectroscopy 50, 490–498 (2019).
    12. Electroluminescence from n‑ZnO microdisks/p‑GaN heterostructure / B. Turko, A. Nikolenko, B. Sadovyi, L. Toporovska, M. Rudko, V. Kapustianyk, V. Strelchuk, M. Panasyuk, R. Serkiz, P. Demchenko // Optical and Quantum Electronics 51, 135 (2019).
    13. Increased radiation hardness of detector-grade Cd0.96Zn0.04Te crystals by doping with In and Ge / Iu. Nasieka, V. Strelchuk, P. Fochuk, A. Kanak, S. Solodin, Z. Zakharuk, S. Sulima, N. Kovalenko // Radiation Physics and Chemistry 165, 108448–108455 (2019).
    14. Mechanical strain in the structure of array of silicon nanowires grown on a silicon substrate / Klimovskaya A.I., Shanina B.D., Nikolenko A.S., Lytvyn P.M., Kalashnyk Y., Strelchuk V.V. // Semiconductor Physics, Quantum Electronics & Optoelectronics 22, 3, 293-298 (2019).
    15. Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon / V.B. Neimash, A.S. Nikolenko, V.V. Strelchuk, P.Ye. Shepeliavyi, P.M.Litvinchuk, V.V. Melnyk, I.V. Olhovik // SPQEO 22, 1, 11–18 (2019).
    16. Complex of cryogenic apparatus for infrared Fourier Bruker Vertex 70V spectrometer / I.P. Zharkov, V.V. Safronov, V.A. Khodunov, V.M. Konoval, V.A. Maslov, А.V. Selivanov, А.G. Solonetsky, V.V. Strelchuk, A.S. Nikolenko, B.I. Tsykaniuk //Sci. innov. 15(4), 69–77 (2019).
    17. The effect of structure on the low-temperature electrical conductivity of carbon nanocomposite temperature sensors / V.V. Vainberg, A.S. Pylypchuk, V.N. Poroshin, Yu.N. Gudenko, A.S. Nikolenko // Fiz. Nizk. Temp. 45, 1294–1299 (2019). 


    1. Micro-Raman spectroscopy and electrical conductivity of graphene layer on SiO2 dielectric subjected to electron beam irradiation / O.M. Slobodian, S.I. Tiagulskyi, A.S. Nikolenko, Yu. Stubrov, Y.V. Gomeniuk, P.M. Lytvyn, and A.N. Nazarov // Materials Research Express 5, 11, 116405 (2018).
    2. Optical and structural properties of individual Co-doped ZnO microwires / O.F. Kolomys, V.V. Strelchuk, S.V. Rarata, R. Hayn, A. Savoyant, F. Giovannelli, F. Delorme, V. Tkach // Superlattices and Microstructures 118, 7-15 (2018). 
    3. Dependence of Structure of Multilayer Graphene Oxide on Degree of Graphitization of Initial Graphite / A. A. Abakumov, I. B. Bychko, A. S. Nikolenko, P. E. Strizhak // Theoretical and Experimental Chemistry 54, 186-192 (2018).
    4. Catalytic Activity of N-Doped Reduced Graphene Oxide in the Hydrogenation of Ethylene and Acetylene / A. A. Abakumov, I. B. Bychko, A. S. Nikolenko, P. E. Strizhak // Theoretical and Experimental Chemistry 54, 218-224 (2018).
    5. Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy / O.M. Slobodian, P.M. Lytvyn, A.S. Nikolenko, V.M. Naseka, O.Yu. Khyzhun, A.V. Vasin, S.V. Sevostianov and A.N. Nazarov // Nanoscale Research Letters 13:139 (2018). 
    6. Silicon surface functionalization based on cavitation processing / R.K. Savkina, A.B. Smirnov, A.I. Gudymenko, V.A. Morozhenko, A.S. Nikolenko, M.I. Smoliy, T.G. Кryshtab // Surface and Coatings Technology 343, 17-23 (2018). 
    7. Morphology and optical properties of Ge nanocrystalline films grown by nonequilibrium epitaxy on Si (001) surface / V.S. Lysenko, S.V. Kondratenko, Yu.N. Kozyrev, V.P. Kladko, O. Yo. Gudymenko, V.V. Strelchuk, A.S. Nikolenko, O.S. Kondratenko, S.A. Iliash, G.S. Pekar // Thin Solid Films 654, 54–60 (2018). 
    8. Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon / V.B. Neimash, A.O. Goushcha, L.L. Fedorenko, P.Ye. Shepelyavyi, V.V. Strelchuk, A.S. Nikolenko, M.V. Isaiev, and A.G. Kuzmich // Journal of Nanomaterials 2018, 1243685 (2018). 
    9. Dry mixing of diamond and n-layered graphene powders substantially different in density and particle size / A. A. Shul’zhenko, L. Jaworska, V. G. Gargin, A. N. Sokolov, A. S. Nikolenko, V.V. Strelchuk // High Pressure Research 38, 53-61 (2018).
    10. The Effect of High Temperature Annealing on the Photoluminescence of ZnMgO Alloys / L. Borkovska, L. Khomenkova, I. Markevich, M. Osipyonok, O. Kolomys, S. Rarata, O. Oberemok, O. Gudymenko, A. Kryvko, V. Strelchuk, // Phys. Status Solidi A 2018, 1800250 (1-7). 
    11. Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface / I. Levchenko, V. Tomashyk, I. Stratiychuk, G. Malanych, A. Korchovyi, S. Kryvyi, O. Kolomys // Applied Nanoscience, 8(5), 949–953 (2018). 
    12. Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates / Yu.Yu. Bacherikov, N.L. Dmitruk, R.V. Konakova, O.F. Kolomys, O.B. Okhrimenko, V.V. Strelchuk, O.S. Lytvyn, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018. V. 21, N 2. P. 200-205. 
    13. Sol-gel synthesis, surface morphology and spectral properties of ZnO ultrathin films on a silicon single crystal / Moskvin P.P., Skyba G.V., Dobryakov V.L., Kolodii M.A., Rashkovetskyi L.V., Kolomys O.F., Rarata S.V. // Voprosy khimii i khimicheskoi tekhnologii, 2018, No. 4, pp. 36-42. 
    14. The effect of Zn3N2 phase decomposition on the properties of highly-doped ZnO: Al, N films / A. Ievtushenko, O. Khyzhun, V. Karpyna, O. Bykov, V. Tkach, V. Strelchuk, O. Kolomys, S. Rarata, V. Baturin, О. Karpenko, G. Lashkarev //Thin Solid films SF 669 605-612 (2018).
    15. Graphitic carbon subnitride: Synthesis, structure, electron and proton transport, photoluminescence and thermoelectric properties / D. Trepyadko, R. Korzh, V. Kremenetsii, Iu. Nasieka, V. Naseka, V. Bortyshevskii, O. Stanovyi // Materials Chemistry and Physics. 209 (95-106) 2018.
    16. An analysis of the specificity of defects embedded into (100) and (111) faceted CVD diamond microcrystals grown on Si and Mo substrates by E/H field discharge / Iu. Nasieka, V. Strelchuk, V. Naseka, Yu. Stubrov, S. Dudnik, V. Gritsina, O. Opalev, K. Koshevoy, V. Strelnitsij, V. Tkach, M. Boyko, Ie. Antipov // Journal of Crystal Growth 491(103-110) 2018.
    17. COMPOSITE TiC-aC:H COATINGS SYNTHESIZED BY CO-DEPOSITION FROM THE PLASMA OF VACUUM ARC SOURCE WITH TITANIUM CATHODE AND PLASMA OF HIGH-FREQUENCY DISCHARGE IN BENZENE VAPOURS / A.A. Luchaninov, A.O. Omarov, V.E. Strel’nitskij, R.L. Vasilenko, Iu.N. Nasieka, V.N. Naseka, N.I. Boiko // Problems of Atomic Science and Technology 113(1):110-113 (2018). 
    18. Optical characterization of the HgCdTe-based composite structure obtained by Ag ion implantation / A.Smirnov, R. Savkina, V. Strelchuk, Iu. Nasieka, I. Demchenko, T. Kryshtab // Journal of materials Science: Materials in electronics 29, 18 (15708–15714) 2018.


    1. Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation / V.B. Neimash, V.V. Melnyk, L.L. Fedorenko, P.Ye. Shepeliavyi, V.V. Strelchuk, A.S. Nikolenko, M.V. Isaiev, A.G. Kuzmich // Semiconductor Physics, Quantum Electronics & Optoelectronics 20, 4, 396-405 (2017).
    2. Vickers Hardness of Diamond and cBN Single Crystals: AFM Approach / Sergey Dub, Petro Lytvyn, Viktor Strelchuk, Andrii Nikolenko, Yurii Stubrov, Igor Petrusha, Takashi Taniguchi and Sergey Ivakhnenko // Crystals 7, 369 (2017). 
    3. Expansion of Bruker Vertex 70v FTІR Spectrometer Capabilities / Zharkov, I.P., Safronov, V.V., Khodunov, V.O., Konoval, V.M., Maslov, V.O., Selivanov, А.V., Solonetsky, A.G., Strelchuk, V.V., Nikolenko, A.S., Tsykaniuk, B.I., Naseka, V.N. // Nauka innov. 13(5), 77-82 (2017). 
    4. Tin-induced crystallization of amorphous silicon under pulsed laser irradiation / V.B. Neimash, V. Melnyk, L.L. Fedorenko, P.YE. Shepelyavyi, V.V. Strilchuk, A.S. Nikolenko, M.V. Isaiev, A.G. Kuzmych // Ukr. J. Phys. 62, 9, 806-817 (2017). 
    5. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire / B.I. Tsykaniuk, A.S. Nikolenko, V.V. Strelchuk, V.M. Naseka, Y.I. Mazur, M.E. Ware, E.A. DeCuir Jr, B. Sadovyi, J.L. Weyher, R. Jakiela, G.J. Salamo and A.E. Belyaev // Nanoscale Research Letters 12:397 (2017). 
    6. Transformation of graphene flakes into carbon nanostructures by γ-irradiation / S.I. Tiagulskyi, A.V. Vasin, A.V. Rusavsky, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, Yu.Yu. Gomeniuk, O.M. Slobodian, V.S. Lysenko, V.N. Poroshin, V.Yu. Povarchuk and A.N. Nazarov // Materials Research Express, 4, 4, (2017). 
    7. Structural Modification of Single-Layer Graphene Under Laser Irradiation Featured by Micro-Raman Spectroscopy / Yurii Stubrov, Andrii Nikolenko, Viktor Strelchuk, Sergii Nedilko and Vitalii Chornii // Nanoscale Research Letters 12:297 (2017). 
    8. Structure and Optical Features of Micro/Nanosized Carbon Forms Prepared by Electrochemical Exfoliation / S.G. Nedilko, S. Revo, V. Chornii, V. Scherbatskyi, К. Ivanenko, M. Nedielko, Y. Sementsov, M. Skoryk, A. Nikolenko, V. Strelchuk // Nanoscale Research Letters 12:28 (2017). 
    9. The effect of deposition processing on structural and luminescent properties of a-SiOC:H thin films fabricated by RF-magnetron sputtering / Vasin, A. Rusavsky, D. Kysil, S. Prucnal, Yu. Piryatinsky, S. Starik, V. Strelchuk // Journal of Luminescence 191, (102-106) 2017.
    10. Synthesis and properties of zinc oxide photocatalyst by high-temperature processing of resorcinol-formaldehyde/zinc acetate mixture / M.A. Nazarkovsky, V.M. Bogatyrov, B. Czech, M.V. Galaburda, G. Wójcik, O.F. Kolomys, V.V. Strelchuk, M.L. Malysheva, O.I. Oranska, V.M. Gun’ko // Journal of Photochemistry and Photobiology A: Chemistry 334 (2017) 36–46.
    11. Raman Submicron Spatial Mapping of Individual Mn-doped ZnO Nanorods / V. Strelchuk, O. Kolomys , S. Rarata, P. Lytvyn, O. Khyzhun, Chan Oeurn Chey, Omer Nur and Magnus Willander // Nanoscale Research Letters 12:351 (2017). 
    12. Solar Explosive Evaporation Growth of ZnO Nanostructures / A. Ievtushenko, V. Tkach, V. Strelchuk, L. Petrosian, O. Kolomys, O. Kutsay, V. Garashchenko, O. Olifan, S. Korichev, G. Lashkarev and V. Khranovskyy // Applied Science 7 (2017) 383. 
    13. Optical and structural study of deformation states in the GaN/AlN superlattices / O. Kolomys, B. Tsykaniuk, V. Strelchuk, A. Naumov, V. Kladko, Y.I. Mazur, M.E Ware, S. Li, A. Kuchuk, Yu. Maidaniuk, M. Benamara, A. Belyaev, G.J. Salamo // Journal of Applied Physics 122 (15), (2017) 155302. 
    14. Ferromagnetic and antiferromagnetic orderings in wurtzite diluted magnetic nanostructures / P. Tronc, Y.E. Kitaev, R. Hayn, V. Strelchuk, O. Kolomys // Physica B: Condensed Matter 522, (2017) 7-14. 
    15. Raman study of L-Asparagine and L-Glutamine molecules adsorbed on aluminum films in a wide frequency range / B.O. Golichenko, V.M. Naseka, V.V. Strelchuk, O.F. Kolomys // Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 297-304 (2017). 
    16. Електричний опір вільноспеченого композиту на основі нітриду алюмінію з додаванням нанорозмірного карбіду кремнію / І.П. Фесенко, О.О. Бочечка, Л.О. Романко, Т.Б. Сербенюк, О.М. Кайдаш, С.В. Ткач, Є.Ф. Кузьменко, В.І. Часник, М.П. Гадзира, Н.К. Давидчук, В.Б. Галямін, В.В. Стрельчук, О.Ф. Коломис // Породоруйнуючий і металообробний інструмент - техніка і технологія його виготовлення і застосування 20, 343-348 (2017). 
    17. Morphology, structure, and mechanical properties of the surface of PbTe crystals after etching with H2O2–HBr–ethylene glycol solutions / G. P. Malanych, V.O. Tomashyk. O.S. Lytvyn, O.F. Kolomys // Inorganic Materials 53(12):1233-1239 (2017). 
    18. Molecular vibrations, activation energies of trapped carriers and additional structure in thermoluminescence of organic polymers / V. Sugakova, N. Ostapenko, Yu. Ostapenko, O. Kerita, V. Strelchuk, O. Kolomys // Synthetic Metals 234 (2017) 117–124. 
    19. Фотосенсибілізація наноструктурованих біоактивних молекулярних систем / Гончаренко Н. А., Павленко О. Л., Момот А. І., Дмитренко О. П., Булавін Л. А., Куліш М. П., Стрельчук В. В., Насєка В. М., Коломис О. Ф., Шпілевський Е. М. // Анотований збірник проектів спільного конкурсу ДФФД - БРФФД. - К. : Академперіодика, 2017. - 180 с. : іл. С. 70-74.
    20. Дослідження параметрів структурно-фазових перетворень парафінів та їх сумішей з наночастинками металів оптичним методом / Є. Антіпов, Ю. Насєка, // Науковий вісник НУБіП України. Серія: Техніка та енергетика АПК 268 (136 – 142) 2017.


    1. Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure / B. Sadovyi, A. Nikolenko, J.L. Weyher, I. Grzegory, I. Dziecielewski, M. Sarzynsk, V. Strelchuk, В. Tsykaniuk, O. Belyaev, I. Petrusha, V. Turkevich, V. Kapustianyk, M. Albrecht, S. Porowski // Journal of Crystal Growth 449, 35–42 (2016). 
    2. Silicon Substrate Strained and Structured via Cavitation Effect for Photovoltaic and Biomedical Application / Rada K. Savkina, Aleksandr I. Gudymenko, Vasyl P. Kladko, Andrii A. Korchovyi, Andrii S. Nikolenko, Aleksey B. Smirnov, Tatyana R. Stara and Viktor V. Strelchuk // Nanoscale Research Letters 11:183 (2016). 
    3. Manifestation of Structure of Electron Bands in Double-Resonant Raman Spectra of Single-Walled Carbon Nanotubes / Y. Stubrov, A. Nikolenko, V. Gubanov and V. Strelchuk // Nanoscale Research Letters 11:2 (2016).
    4. Fabrication of Nanostructured Objects by Thermal Vacuum Deposition of Ge Films onto (100)GaAs Substrates / Vitalii Borblik, Andrey Korchevoi, Andrii Nikolenko, Viktor Strelchuk, Alexander Fonkich, Yurii Shwarts, Marina Shwarts// Nanoscience and Nanoengineering 4, 1, 22-30, (2016). 
    5. Structural and optical studies of strain relaxation in Ge1−xSnx layers grown on Ge/Si(001) by molecular beam epitaxy / A.S. Nikolenko, V.V. Strelchuk, N.V. Safriuk, S.B. Kryvyi, V.P. Kladko, O.S. Oberemok, L.V. Borkovska, Yu.G. Sadofyev // Thin Solid Films 613, 68-74 (2016). 
    6. Optical and structural properties of Mn-doped ZnO nanorods grown by aqueous chemical growth for spintronic applications / V.V. Strelchuk, A.S. Nikolenko, O.F. Kolomys, S.V. Rarata, K.A. Avramenko, Р.М. Lytvyn, P. Tronc, Chan Oeurn Chey, Omer Nur, Magnus Willander // Thin Solid Films 601, 22-27 (2016)
    7. Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures / V. Kladko, A. Kuchuk, А. Naumov, N. Safriuk, O. Kolomys, S. Kryvyi, H. Stanchu, A. Belyaev, V. Strelchuk, B. Yavich, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Physica E: Low-dimensional Systems and Nanostructures, 2016, V.76, P.140–145. 
    8. Interaction of optical vibrations with charge traps and the thermoluminescence spectra of polymers / V. Sugakov, N. Ostapenko, YU. Ostapenko, O. Kerita, V. Strelchuk, O. Kolomys, A. Watanabe // Укр. фiз. журн. 2016. Т. 61, № 6 – P.531-536. 
    9. Field emission properties of pointed cathodes based on graphene films on SiC R.V. Konakova, O.B. Okhrimenko, A.F. Kolomys, V.V. Strel’chuk, A.M. Svetlichnyi, O.A. Ageev, E.Yu. Volkov, A.S. Kolomiitsev, I.L. Zhityaev, O.B. Spiridonov // J. Superhard Mater. – 2016. –V.38 (4). – P. 235–240. 
    10. Механомеханічна модифікація мідь-цинк-алюмооксидного каталізатора синтезу метанолу / Н.Ю. Хімач, Є.В. Полункін, С.Л. Мельникова, О.Ф. Коломис // Вопросы химии и химической технологии – 2016. – Т.1 (105). – С.78 – 82. 
    11. Structural transformation of Bi1-x/3V1-xMoxO4 solid solution for light-driven water oxidation / K.Terebilenko, V.Baumer, K. Bychov, N. Slobodyanik, M. Pavliuk, A. Thapper, I. Tokmenko, Yu. Naseka, V. Strelchuk //  Dalton Transaction 45 (2016) 3895 – 3904. 
    12. Influence of reacting gas content on structural and electro-physical properties of nanostructured diamond films grown by chemical vapor deposition with crossed E/H field glow discharge /  Iurii Nasieka, V. Strelchuk, Y. Stubrov, S. Dudnik, K. Koshevoy, V. Strel’nitskij // Thin Solid Films, 616 (2016) 297-302 
    13. Radiation Induced Enhancement of Hydrogen Influence on Luminescent Properties of nc-Si/SiO2 Structures / I.Lisovskyy, M. Voitovych, V. Litovchenko, V. Voitovych, Iurii Nasieka, V. Bratus // Nanoscale Research Letters (2016) 11:545 
    14. Direct synthesized graphene-like film on SiO2: Mechanical and optical properties / E.G. Bortchagovsky, A.V. Vasin, P.M. Lytvyn, S.I. Tiagulskyi, A.M. Slobodian, I.N. Verovsky, V.V. Strelchuk, Yu. Stubrov, A.N. Nazarov  // Semiconductor Physics, Quantum Electronicand Optoelectronics 19, 4, (328–333) 2016. 
    15. Synthesis, properties and application of graphene-based materials obtained from carbon nanotubes and acetylene black / M.O. Danilov, I.A. Rusetskii, I.A. Slobodyanyuk, G.I. Dovbeshko, G.Ya. Kolbasov, Yu.Yu. Stubrov  // Ukrainian journal of physics 61, 10, (909–916) 2016.


    1. Comprehensive Evaluation of the Properties of Nanocrystalline Diamond Coatings Grown Using CVD with E/H Field Glow Discharge Stabilization / Iu. Nasieka, V. Strelchuk, Yu. Stubrov, M. Boyko, S. Dudnik, K. Koshevoy, V. Strel’nitskij // Journal of Nanomaterials Volume 703897 (2015).
    2. Studies of the Ceramic Material Produced by Pressureless Sintering from the AlN–Y2O3–(Si–C) Powder Composition Using Electron Microscopy, Raman Spectroscopy and Measurements of the Thermal Conductivity and Microwave Radiation / I.P. Fesenko, V.I. Chasnyk, O.F. Kolomys, O.M. Kaidash, N.K. Davydchuk, T.B. Serbenyuk, E.F. Kuz’menko, M.P. Gadzyra, O.O. Lyeshchuk, V. V. Strel’chuk, V.B. Galyamin, S.V. Tkach, E.I. Fesenko, P.S. Shmegera, Yu.I. Azima, H. Recht, H. Vollstädt // Journal of Superhard Materials 37, 2, 73–81 (2015). 
    3. Особливості напруженого стану германієвих нанокристалів в матриці SiOx / В.В. Курилюк, О.О. Коротченков, З.Ф. Цибрій, А.С. Ніколенко, В.В. Стрельчук // Журнал Нано- та Електронної Фізики, 7, 1, 01029 (2015). 
    4. Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition / V.V. Strelchuk, O.F. Kolomys, B.O. Golichenko, M.I. Boyko, E.B. Kaganovich, I.M. Krishchenko, S.O. Kravchenko, O.S. Lytvyn, E.G. Manoilov, Iu.M. Nasieka // Semiconductor Physics, Quantum Electronics & Optoelectronics, 18, 1, 46-52 (2015). 
    5. The comprehensive evaluation of the structural and functional properties of the gas- statically treated Au–CdZnTe–Au structures for X- and gamma-ray detectors / Iu. Nasieka, V. Strelchuk, M. Boyko, A. Rybka, V. Kutniy, D. Nakonechnyj // Radiation Physics and Chemistry, 113, 47–52 (2015). 
    6. Optical characterization of the AgInS2 nanocrystals synthesized in aqueous media under stoichiometric conditions / L. Borkovska, А. Romanyuk, V. Strelchuk, Yu. Polishchuk, V. Kladko, A. Raevskaya, O. Stroyuk, T. Kryshta // Materials science in semiconductor processing, 37, 135-142 (2015). 
    7. Термическое вакуумное напыление пленок Ge на подложки из GaAs как способ получения наноструктурированных объектов / V.L. Borblik, A.A. Korchevoi, A. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwartz // Nanosized systems and nanomaterials: investigations in Ukraine, Chapter: Chapter 2, Publisher: Akademperiodika, Ed. by A.G. Naumovets, pp.226 – 231 (2015). 
    8. Effect of Li-doping on Photoluminescence of Screen-printed Zinc Oxide Films / L. Khomenkova, V. Kushnirenko, M. Osipenok, K. Avramenko, Y. Polishchuk, I. Markevich, V. Strelchuk, V. Kladko, L. Borkovska and T. Kryshtab // Mater. Res. Soc. Symp. Proc., Vol. 1766, 424 (11), (2015).
    9. Optical Characterization of SERS Substrates Based on Porous Au Films Prepared by Pulsed Laser Deposition / V. Strelchuk, O.F. Kolomys, E.B. Kaganovich, I.M. Krishchenko, B.O. Gilichenko, M.I. Boyko, S.O. Kravchenko, I.V. Kruglenko, O.S. Lytvyn, E.G. Manoilov, and Iu.M. Nasieka // Journal of nanomaterial, 2015, 203515 (7), (2015).
    10. Structural and Optical Characterization of ZrO2 and Y2O3-ZrO2 Nanopowders / N. Korsunska, A. Zhuk, V. Papusha, O. Kolomys, Y. Polishchuk, Y. Bacherikov, V. Strelchuk, V. Kladko, T. Konstantinova, T. Kryshtab, and L. Khomenkova // Characterization of Nanostructured Materials, Chapter: MATERIALS CHARACTERIZATION, CHAPTER II, Publisher: Springer, 2015, XII, 196 p. 116 illus., 64 illus., Editors: Pérez Campos, Ramiro, Contreras Cuevas, Antonio, Esparza Muñoz, Rodrigo (Eds, pp.116 illus) (2105). 
    11. Raman and photo-luminescence characterization of diamond films for radiation detectors / Iu. Nasieka, M. Boyko, V. Strelchuk, V. Voevodin, A. Vierovkin, A. Rybka, V. Kutniy, S. Dudnik, V. Gritsina, O. Opalev, V. Strel’nitskij // Sensors and Actuators A: Physical, 223, 18 – 23, (2015).
    12. Структура та електронні властивості нанокомпозитів ПВХ з вуглецевими нанотрубками при опроміненні / Т. М. Пінчук-Ругаль, О. П. Дмитренко, М. П. Куліш, О. С. Ничипоренко, Ю. Є. Грабовський, В. В. Стрельчук, А. С. Ніколенко, М. І. Шут, В. В. Шлапацька // Наносистеми, наноматеріали, нанотехнології, 13 (2), сс. 325–336 (2015). 
    13. Формирование наноструктур, стимулированное поверхностными акустическими волнами при наносекундном лазерном облучении CdTe / Власенко А.И., Байдуллаева А., Велещук В.П., Мозоль П.Е., Бойко Н.И., Литвин О.С. // Физика и Техника Полупроводников. – 2015. – Т. 49. – №. 2. – С. 236-240. 
    14. Structural and Luminescent Properties of (Y,Cu)-Codoped Zirconia Nanopowders / N. Korsunska, M. Baran, Yu. Polishchuk, O. Kolomys, T. Stara, M. Kharchenko, O. Gorban, V. Strelchuk, Ye. Venger, V. Kladko and L. Khomenkova // ECS Journal of Solid State Science and Technology, 4(9) N103-N110 (2015).
    15. SERS spectroscopy of nanocomposite porous films containing silver nanoparticles / E.B. Kaganovich, I.M. Krischenko, S.A. Kravchenko, E.G. Manoilov, B.O. Golichenko, A.F. Kolomys, V.V. Strelchuk // Optics and Spectroscopy, 18 (2) pp 294-299 (2015).
    16. Computation studies of boron- and Nitrogen-doped Single-Walled Carbon Nanotubes as Potential Sensor Materials of hydrogen Halide Molecules HX (X= F, Cl, Br) / Yuriy Hizhnyi, Sergii G. Nedilko, Viktor Borysiuk and Viktor A. Gubanov // International journal of Quantum Chemistry, DOI: 10.1002/qua.24953 
    17. Композит гідроксид нікелю / активований вуглець як електродний матеріал в пристроях накопичення заряду / О.М. Хемій, Л.С. Яблонь, І.М. Будзуляк, О.В. Морушко, Ю.Ю. Стубров, І.П. Яремій // Фізика і хімія твердого тіла. – 2015. – Т. 16, №2. – С. 355 – 359. 
    18. The growth of weakly coupled graphene sheets from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M. Tryus, A.E. Belyaev // Semiconductor Physics, Quantum Electronic and Optoelectronics. – 2014. – V. 17, №3. – P. 301 – 307.


    1. Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties / V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts// Semiconductor Physics, Quantum Electronics & Optoelectronics 17, 3, 237-242 (2014).
    2. Photoluminescence and Raman scattering behavior of Si rich silicon oxynitride films annealed at different temperatures / V. Naseka, Iu. Nasieka, M. Voitovych, A. Sarikov, I. Lisovskyy and V. Strelchuk //Solid State Phenomena 205-206, 492-496 (2014).
    3. Исследование структуры, эмиссионных и пьезоэлектрических свойств пленок ZnS, ZnS−ZnO и ZnO, полученных химическим методом / В.С. Хомченко, Н.Н. Рощина, Л.В. Завьялова, В.В. Стрельчук, Г.С. Свечников, Н.П. Татьяненко, В.Л. Громашевский, О.С. Литвин, Е.А. Авраменко, Б.А. Снопок // Журнал технической физики 84, 1, 94-103 (2014).
    4. An experimental study of properties of ultrathin Si layer with bonded Si/SiO2 interface / O. Naumova, B. Fomin, V. Popov, V. Strelchuk, A. Nikolenko and A. Nazarov // Advanced Materials Research 854,  3-10 (2014).
    5. Comparative investigation of structural and optical properties of Si-rich oxide films fabricated by magnetron sputtering / L. Khomenkova, M. Baran, O. Kolomys, V. Strelchuk, A. Kuchuk, V. Kladko, J. Jedrzejewski, I. Balberg, Y. Goldstein, Ph. Marie, F. Gourbilleau and N. Korsunska // Advanced Materials Research 854, 117-124 (2014).
    6. Non-stoichiometry effect and disorder in Cu2ZnSnS4 thin films obtained by flash evaporation: Raman scattering investigation / R. Caballero, E. Garcia-Llamas, J.M. Merino, M. Leon, I. Babichuk, V. Dzhagan, V. Strelchuk, M. Valakh // Acta Materialia 65, 412–417 (2014).
    7. Spatial distribution of free carrier concentration in vertical GaN Gunn-diode structures studied by confocal micro-Raman spectroscopy and Kelvin probe force microscopy / V.V. Strelchuk, A. S. Nikolenko, P. M. Lytvyn, A. S. Romanyuk, Yu. I. Mazur, M. E. Ware, E.A. DeCuir, G. J. Salamo, A. E. Belyaev // Phys. Status Solidi C 11, 2, 269–273 (2014).
    8. Possibility of graphene growth by close space sublimation / M.V. Sopinskyy, V.S. Khomchenko, V.V. Strelchuk, A.S. Nikolenko, G.P. Olchovyk, V.V. Vishnyak, V.V. Stonis // Nanoscale Research Letters 9, 1, 182 (2014).
    9. Photo-etching of HVPE-grown GaN: revealing extended non-homogeneities induced by periodic carrier gas exchange / J.L. Weyher, T. Sochacki, M. Amilusik, M. Fijałkowski, B. Łucznik, R. Jakieła, G. Staszczak, A. Nikolenko, V. Strelchuk, B. Sadovyi, M. Boćkowski, I. Grzegory // Journal of Crystal Growth 403, 77-82 (2014).
    10. Structural and Optical Properties of ZnO Films Produced by a Nonvacuum Chemical Technique / V. V. Strelchuk, K. A. Avramenko, A. S. Romaniuk, L. V. Zavyalova, G. S. Svechnikov, V. S. Khomchenko, N. M. Roshchina, and V. M. Tkach // Semiconductors 48, 9, 1145–1150 (2014).
    11. Photoluminescence study of gamma-irradiation effect on the defect structure in Ge-doped CdTe single crystals / Iu. Nasieka, L. Rashkovetskyi, M. Boyko, V. Strelchuk, Z. Tsybrii, B. Danilchenko, and L. Shcherbak // Phys. Status Solidi C 11, N9, 1510-1514 (2014).
    12. Gamma-irradiation effect on electron–phonon coupling in Ge-doped CdTe crystals: Raman and photoluminescence study / Iu. Nasieka, M. Boyko, V. Strelchuk, B. Danilchenko, L. Rashkovetskyi, P. Fochuk // Solid State Communications 196 46–50 (2014).
    13. Структурные и оптические свойства плeнок ZnO , полученных безвакуумным химическим методом / В.В. Стрельчук, Е.А. Авраменко, А.С. Романюк, Л.В. Завьялова, Г.С. Свечников, В.С. Хомченко, Н.Н. Рощина, В.Н. Ткач // ФТП 48, 9, 1176-1181 (2014).
    14. Laser-annealing-induced features of the Raman spectra of quartz/Si and glass/Si structures / R. V. Konakova, A.F. Kolomys, O. B. Okhrimenko, V. V. Strelchuk, A. M. Svetlichnyi, M. N. Grigoriev, B. G. Konoplev  // Semiconductors 48, 5 621-624 (2014).
    15. Structure and light emission of Si-rich Al2O3 and Si-rich-SiO2 nanocomposites / L. Khomenkova, O. Kolomys, M. Baran, A. Kuchuk, V. Strelchuk, Ye. Venger, V. Kladko, J. Jedrzejewski, I. Balberg, N. Korsunska // Microelectronic Engineering 125, 62-67 (2014).
    16. Nanostructured Y-doped ZrO2 powder: peculiarities of light emission under electron beam excitation / N. Korsunska, V. Papusha, O. Kolomys, V. Strelchuk, A. Kuchuk, V. Kladko, Yu. Bacherikov, T. Konstantinova, L. Khomenkova // Phys. Stat. Sol. (C) 11, 9-11, 1417-1422 (2014).
    17. Swift Xe ion irradiation effect on structure and vibrational properties of undoped and Cd-doped ZnO films / D. Myroniuk, I. Shtepliuk, G.Lashkarev, V. Lazorenko, V. Skuratov, I. Timofeeva, A. Romaniuk, V. Strelchuk and O. Kolomys // Phys. Stat. Sol. (C) 11, 9-10, 1435-1438 (2014).
    18. Influence of annealing in Zn vapor on the luminescence of MgZnO ceramics / I. Markevich, T. Stara, O. Kolomys, A. S. Romanyuk and V. Strelchuk // Phys. Stat. Sol. (C) 11, 9-10, 1485-1487 (2014).
    19. Micro-Raman and micro-photoluminescence study of bio-conjugated core–shell CdSe/ZnS nanocrystals / L. Borkovska, N. Korsunska, T. Stara, O. Kolomys, V. Strelchuk, O. Rachkov, A. Kryvko // Physica B: Condensed Matter 453, 75-80 (2014).
    20. Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn1-xCdxO films grown by dc magnetron sputtering / O. Kolomys, A. Romanyuk, V. Strelchuk, G. Lashkarev, O. Khyzhun, I. Timofeeva, V. Lazorenko, V. Khomyak // Semiconductor Physics, Quantum Electronics & Optoelectronics, vol.17, №3, 275-283 (2014).
    21. Structure and the Emission and Piezoelectric Properties of MOCVD_Grown ZnS, ZnS–ZnO, and ZnO Films / V. S. Khomchenko, N. N. Roshchina, L. V. Zavyalova, V. V. Strelchuk, G. S. Svechnikov, N. P. Tatyanenko, V. L. Gromashevskii, O. S. Litvin, E. A. Avramenko, and B. A. Snopok // Technical Physics.- 2014.-V. 59. -P. 93–101.
    22. Photoluminescence of As2S3 doped with Cr and Yb / A.V. Stronski, O.P. Paiuk, V.V. Strelchuk, Iu.M. Nasieka, M. Vlček // Semiconductor Physics, Quantum Electronics & Optoelectronics 17, 4, (2014).
    23. The growth of weakly coupled graphene sheets from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M. Tryus and A.E. Belyaev // Semiconductor Physics, Quantum Electronics & Optoelectronics 17, 3, 301-307 (2014). 


    1. The influence of annealing on structural and photoluminescence properties of silicon-rich Al2O3 films prepared by co-sputtering N. Korsunska, T. Stara, V. Strelchyk, O. Kolomys, V. Kladko, A. Kuchuk, L. Khomenkova, J. Jedrzejewski, I. Balberg //Physica E: Low-dimensional Systems and Nanostructures 51, 115-119 (2013).
    2. The mechanism of the photoluminescence changes in bio-conjugated CdSe/ZnS quantum dots L. Borkovska, N. Korsunska, T. Stara, O. Kolomys, V. Strelchuk, O. Rachkov, T. Kryshtab // Applied Surface Science 281, 79–83 (2013).
    3. Photoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC Crystals Victor Bratus', Roman Melnyk, Oleksandr Kolomys, Bela Shanina, Victor Strelchuk // Materials Science Forum, 740-742, 417 (2013).
    4. Phase transitions in the nanopowders KTa0.5Nb0.5O3 studied by Raman spectroscopy I.S.Golovina, V.P.Bryksa, V.V.Strelchuk, I.N.Geifman // Functional Materials 20, 1, 75 (2013).
    5. Size effects in the temperatures of phase transitions in KNbO3 nanopowder I. S. Golovina, V. P. Bryksa, V. V. Strelchuk, I. N. Geifman, and A. A. Andriiko // J. Appl. Phys. 113, 144103 (2013). 
    6. Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy A.E. Belyaev, V.V. Strelchuk, A.S. Nikolenko, A.S. Romanyuk, Yu.I. Mazur, M.E. Ware, E.A. DeCuir Jr and G.J. Salamo // Semicond. Sci. Technol. 28, 105011(2013).
    7. Characterization of graphene layers by Kelvin probe force microscopy and micro-Raman spectroscopy A.N. Nazarov, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, A.V. Vasin, A. V. Rusavsky, V. S. Lysenko, and V. P. Popov // Phys. Status Solidi C 10, No. 7–8, 1172–1175 (2013).
    8. Low-temperature photoluminescence analysis of the γ-irradiation effect on the defect structure in Ge-doped CdTe single crystals Iu. Nasieka, L. Rashkovetskyi, M. Boyko, V. Strelchuk, Z. Tsybrii, B. Danilchenko, L. Shcherbak // Journal of Luminescence 144, 112–116 (2013).
    9. Role of structural ordering on optical properties of the glasses Ag0.05Ga0.05Ge0.95S2–Er2S3 V.V. Halyan, V.V.Strelchuk, V.O.Yukhymchuk, .H.Kevshyn, G.Ye.Davydyuk, M.V. Shevchuk, S.V.Voronyuk // Physica B 411, 35-39 (2013).
    10. Influence of Irradiation with γ-Ray Photons on the Photoluminescence of Cd0.9Zn0.1Te Crystals Preliminarily Subjected to the Intense Radiation of a Neodymium Laser K.D. Glinchuk, A.P. Medvid’, A.M. Mychko, Yu.M. Naseka, A.V. Prokhorovich, O.M. Strilchuk // Semiconductors 47, No. 4, pp. 457–463 (2013).
    11. Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix A.S. Nikolenko // Semiconductor Physics, Quantum Electronics & Optoelectronics 16, N 1. P. 86-90 (2013).
    12. Raman scattering and disorder effect in Cu2ZnSnS4 M. Y. Valakh, O.F. Kolomys, S.S. Ponomaryov, V. O. Yukhymchuk, I.S. Babichuk, V.Izquierdo-Roca, E. Saucedo, A. Perez-Rodriguez, J. R. Morante, S. Schorr, I. V. Bodnar  // Physica Status Solidi (RRL) 7 (4), 258-261(2013).
    13. Si-rich Al2O3films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatmentN. Korsunska, L. Khomenkova, O. Kolomys, V. Strelchuk, A. Kuchuk, V. Kladko, T. Stara, O. Oberemok, B. Romanyuk, P. Marie, J. Jedrzejewski and I. Balberg  // Nanoscale Research Letters 8, 273-282 (2013).
    14. Сравнительные характеристики спектров комбинационного рассеяния света пленок графена на проводящих и полуизолирующих подложках 6H-SiC Р.В. Конакова, А.Ф. Коломыс, О.Б. Охрименко, В.В. Стрельчук, Е.Ю. Волков, М.Н. Григорьев, А.М. Светличный, О.Б. Спиридонов // Физика и техника полупроводников 47 (6), 802-804 (2013).
    15. Temperature dependence of Raman spectra of silicon nanocrystals in oxide matrix A.S. Nikolenko // Ukr. J. Phys. 58, №10, 980-987 (2013). 
    16. Дослідження рекомбінаційних характеристик Cz-кремнію, імплантованого іонами заліза Д.В. Гамов, О.І. Гудименко, В.П. Кладько, В.Г. Литовченко, В.П. Мельник, О.С. Оберемок, В.Г. Попов, Ю.О. Поліщук, Б.М. Романюк, В.В. Черненко, В.М. Насєка //Укр. фіз. журн. 58, №9, 883-890 (2013).
    17. Рекомбінаційні характеристики пластин монокристалічного кремнію з приповерхневим порушеним шаром А.В. Саченко, В.П. Костильов, В.Г. Литовченко, В.Г. Попов, Б.М. Романюк, В.В. Черненко, В.М. Насєка, Т.В. Слусар, С.І. Кирилова, Ф.Ф. Комаров // Укр. фіз. журн. 58, №2, 142-150 (2013).
    18. Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors Iu. Nasieka, N. Kovalenko, V. Kutniy, A. Rybka, D. Nakonechnyj, S. Sulima, V. Strelchuk // Sensors and Actuators A: Physical, Volume 203, 176-180 (2013).
    19. Isostructural rhodium selenogalogenides Rh2Se9Hal6 (Hal — Cl, Br) S.A. Baranets, Z.A. Fokina, P.Yu. Demchenko, O.G. Yanko, A.S. Nikolenko, L.B. Kharkova, R.Ye.Gladyshevskii, S.V. Volkov // Ukrainian Chemistry Journal 79, №9, 3 (2013).
    20. Вплив швидких важких іонів Xe26+ на властивості плівок оксиду цинку, осаджених на підкладках кремнію Д.В. Миронюк, Г.В. Лашкарьов, А.С. Романюк, В.Й. Лазоренко, І.І. Штеплюк, В.О. Скуратов, І.І. Тімофеєва, В.В. Стрельчук, О.Ф. Коломис, В.В. Хомяк // ФІЗИКА І ХІМІЯ ТВЕРДОГО ТІЛА 14, № 3 c. 541-546 (2013).
    21. Спектры комбинационного рассеяния света пористых нанокомпозитных плёнок оксида алюминия с Si квантовыми точкамиВ.В. Стрельчук, А.С. Николенко, Э.Б. Каганович, И.М. Крищенко, Э.Г. Манойлов // Оптоэлектроника и полупроводниковая техника 48, 73-81 (2013). 
    22. Graphene layers fabricated from the Ni/a-SiC bilayer precursor A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S.Nikolenko, A.S.Hirov, A.V. Rusavsky, V.P. Popov, V.S. Lysenko // Semiconductor Physics, Quantum Electronics & Optoelectronics, vol.16, №4, 322-330 (2013).
    23. Вплив швидких важких іонів Xе26+ на властивості плівок оксиду цинку, осаджених на підкладки сапфіру Д.В. Миронюк , A.С. Романюк, В.О. Скуратов, І.І. Тімофеєва, Г.В. Лашкарьов, В.Й. Лазоренко, В.В. Стрельчук, О.Ф. Коломис, В.В. Хомяк // Науковий вісник Ужгородського університету. Серія Фізика 34, 86-91 (2013).
    24. Effect of high electron irradiation on structure and optical properties of ZnO films D. V. Myroniuk, G.V. Lashkarev, I. I. Shtepliuk, V. Y. Lazorenko, V. T. Maslyuk, I. I. Timofeevs, A. S. Romaniuk, V. V. Strelshuk, O. F. Kolomys, V. V. Khomyak // ACTA Physica Polonia A 124, 5, 891-894 (2013).


    1. Влияние легирования фторидом эрбия на фотолюминесценцию пленок SiOx Власенко Н.А., Сопинский Н.В., Гуле Е.Г., Стрельчук В.В., Олексенко П.Ф., Велигура Л.И., Николенко А.С., Мухльо М.А. // ФТП 46, 3, с. 338-343 (2012).
    2. Defect driven ferroelectricity and magnetism in nanocrystalline KTaOI.S. Golovina, S.P. Kolesnik, V.P. Bryksa, V.V. Strelchuk , I.B. Yanchuk, I.N. Geifman, S.A. Khainakov, S.V. Svechnikov, A.N. Morozovska // Physica B 407, 614–623 (2012).
    3. Эффекты латерального упорядочения самоорганизованных наноостровков SiGe, выращенных на напряженных буферных слоях Si1−xGex В.В. Стрельчук, А.С. Николенко, П.М. Литвин, В.П. Кладько, А.И. Гудыменко, М.Я. Валах, З.Ф. Красильник, Д.Н. Лобанов, А.В. Новиков //  ФТП 46, 5, с. 665-672 (2012).
    4. The effect of bio-conjugation on aging of the photoluminescence in CdSeTe–ZnS core–shell quantum dots T.G. Kryshtab, L.V. Borkovska, O.F. Kolomys, N.O. Korsunska, V.V. Strelchuk, L.P. Germash, R.Yu. Pechers’ka, G. Chornokur, S.S. Ostapenko, C.M. Phelan, O.L. Stroyuk // Superlattices and Microstructures 51 (2012) 353–362.
    5. Raman study of Si nanoparticles formation in the annealed SiOx and SiOx:Er,F films on sapphire substrate A.S. Nikolenko, M.V. Sopinskyy, V.V. Strelchuk, L.I. Veligura, V.V. Gomonovych // Journal of Optoelectronics and Advanced Materials 14, 1-2, p. 120 - 124 (2012).
    6. Effects of the Lateral Ordering of Self-Assembled SiGe Nanoislands Grown on Strained Si1 – xGex Buffer Layers V.V. Strelchuk, A. S. Nikolenko, P. M. Lytvyn, V. P. Kladko, A. I. Gudymenko, M. Ya. Valakh, Z. F. Krasilnik, D. N. Lobanov, and A. V. Novikov // Semiconductors 46, 5, pp. 647–654 (2012).
    7. Преобразование структуры SiC/por-SiC/TiO2 в процессе быстрого термического отжига Р.В. Конакова, А.Ф. Коломыс, О.С. Литвин, О.Б. Охрименко, В.В. Стрельчук, А.В. Светличный, Л.Г. Линец //ФТП 46, 9, с. 1244-1247 (2012).
    8. Електричні та оптичні властивості пористого вуглецевого матеріалу В.І. Мандзюк, Н.І. Нагірна, В.В. Стрельчук, С.І. Будзуляк, І.М. Будзуляк, І.Ф. Миронюк, Б.І. Рачій // Фізика і хімія твердого тіла 13, 1б 94-101 (2012).
    9. Structure and Hardness of Octahedral Natural Diamond Single Crystals Depending on the HPHT Treatment Conditions A. N. Sokolov, A. A. Shul’zhenko, V. G. Gargin, M. G. Loshak, L. I. Aleksandrova, A. S. Nikolenko, V. V. Strel’chuk, A. N. Katrusha, and O. M. Kutsai // Journal of Superhard Materials Vol. 34, No. 3, pp. 166–172 (2012).
    10. Changes in the fractal and electronic structures of activated carbons produced by ultrasonic radiation and the effect on their performance in supercapacitors B.Ya. Venhryn, I.I. Grygorchak, Z.A. Stotsko, Yu.O. Kulyk, S.I. Mudry, V.V. Strelchuk, S.I. Budzulyak, G.I. Dovbeshko, O.M. Fesenko // Archives of Materials Science and Engineering 57, 1, 28-37 (2012).
    11. Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures D. S. Abramkin, M. A. Putyato, S. A. Budennyy, A. K. Gutakovskii, B. R. Semyagin, V. V. Preobrazhenskii, O. F. Kolomys, V. V. Strelchuk, and T. S. Shamirzaev // J. Appl. Phys. 112, 083713 (2012).
    12. Submicron Raman and Photoluminescence Topography of InAs/Al(Ga)As quantum dots structures O.F. Kolomys, V.V. Strelchuk, T.S. Shamirzaev, A.S. Romanyuk, P. Tronc // Applied Surface Science 260, 47-50 (2012).
    13. Dispersion of Electron-Phonon Resonances in One-Layer Graphene and Its Demonstration in Micro-Raman Scattering V.V.  Strelchuk, A. S. Nikolenko, V. O. Gubanov, M. M. Biliy, and L. A. Bulavin // J. Nanosci. Nanotechnol. 12, 8671-8675 (2012).
    14. Low- and High-Frequency Intermediate Modes with Step-Like Dispersion in Resonance Raman Scattering of Carbon Nanotubes V. V. Strelchuk, A. S. Nikolenko, V. O. Gubanov, M. M. Biliy, and L. A. Bulavin // J. Nanosci. Nanotechnol. 12, 8829-8831 (2012).
    15. Photoluminescence evaluation of the quality of Cd0.9Zn0.1Te detectors doped with different indium concentrations Yu. Naseka, O. Strilchuk, V. Komar, I. Terzin, S. Sulima, K. Bryleva // Physica Status solidi (b). – 2012. – V. 249, № 1. – P.142–145.
    16. Investigation of the thermal annealing effect on the defects structure in γ-irradiated CdZnTe crystals by photoluminescence method Yu. Naseka, L. Rashkovetskyi, O. Strilchuk, V. Maslov, E. Venger // Nuclear Instruments and Methods in Physics Research B. – 2012. –V. 290. P. 26–29.
    17. Identification of nanoscale structure and morphology reconstruction in oxidized a-SiC:H thin films A.V. Vasin, A.V. Rusavsky, A.N. Nazarov, V.S. Lysenko, P.M. Lytvyn, V.V. Strelchuk, K.I. Kholostov, V.P. Bondarenkb, S.P. Starik // Applied Surface Science 260, 73– 76 (2012).
    18. Raman and Photoluminescence study of ZnO Films Grown by Chemical Methods K. A. Avramenko, A. S. Romanyuk, V V. Strelchuk, O. F. Kolomys, L.V. Zavyalova, S. V. Svechnikov, B. A. Snopok, N. N. Roshina // Proceedings of the Internationals: Applications and Properties 1, 3, 03TF12 (2012).
    19. Особенности фазовых переходов в наноразмерных порошках KTa0.7Nb0.3O3 И.С. Головина, В.П. Брыкса, В.В. Стрельчук, В.Е. Родионов, В.В. Литвиненко // ФІП ФИП PSE, 2012, т. 10, № 4, c. 403-410 (2012).


    1. Confocal Raman depth-profile analysis of the electrical and structural properties in III-nitride structures Strelchuk V.V., Bryksa V.P., Avramenko K.A., Valakh M.Ya., Belyaev A.E., Mazur Yu.I., Ware M.E., DeCuir E.A., Jr., and Salamo G. J. // Physica status solidi (c) 8, 7-8, pages 2188–2190 (2011).
    2. Confocal Raman depth-scanning spectroscopic study of phonon-plasmon modes in GaN epilayers Strelchuk V.V., Bryksa V.P., Avramenko K.A., Valakh M.Ya., Belyaev A.E., Mazur Yu.I., Ware M.E., DeCuir E.A., Jr., and Salamo G. J. // Journal of Applied Physics 109, 123528 (2011).
    3. Scanning confocal Raman spectroscopy of silicon phase distribution in individual Si nanowires A. Nikolenko, V. Strelchuk, A. Klimovskaya, P. Lytvyn, M. Valakh, Yu. Pedchenko, A. Voroschenko, D. Hourlier // Physica Status Solidi C 8, No. 3, 1012–1016 (2011).
    4. Low-frequency two-phonon modes step-like dispersion in resonance raman scattering of single-walled carbon nanotubes V.O. Gubanov, M.M. Biliy, O.V. Rozhylo,V.V. Strelchuk, A.S. Nikolenko,M.Y.Valakh,Y.I. Prylutskyy, U. Ritter, P. Scharff // Materialwissenschaft und Werkstofftechnik (Materials Science and Engineering Technology) 42, No. 1, p.33-36 (2011).
    5. Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands S. V. Kondratenko, O. V. Vakulenko, Yu. N. Kozyrev, M. Yu. Rubezhanska, A. G. Naumovets, A. S. Nikolenko, V. S. Lysenko, V. V. Strelchuk, C. Teichert // Journal of Materials Science, 46, p.5737-5742 (2011).
    6. The nanometer scaled defects induces with the dislocation motion in II-VI insulated semiconductors V.N. Babentsov, V.A. Boyko, A.F. Kolomys, G.A. Shepelski, V.V. Strelchuk and N.I. Tarbaev // Advanced Materials Research 276, pp 195-202 (2011). 
    7. Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb S. O. Gordienko, A. N. Nazarov, A. V. Rusavsky, A. V. Vasin, Yu. V. Gomeniuk, V. S. Lysenko, V. V. Strelchuk, A. S. Nikolenko, and S. Ashok // Phys. Status Solidi C, 8, 9, 2749–2751 (2011).
    8. Радіаційні пошкодження та полімеризація плівок фулеритів С60 при опроміненні іонами Ті О.Л. Павленко, О.П. Дмитренко, М.П. Куліш, М.Є. Корнієнко, М.А. Заболотний, Ю.Є. Грабовський, В.А. Брусенцов, Т.В. Родіонова, Б.М. Романюк, І.М. Хацевич, В.В. Стрельчук // ВАНТ 2, с. 22-27 (2011).
    9. Вплив термічної активації носіїв заряду на температурні залежності темнового струму, фотопровідність та фотолюмінесценцію гетероструктур In0.4Ga0.6As/GaAs з квантовими точками О.В. Вакуленко, С.Л. Головинський, С.В. Кондратенко, I.А. Гринь, В.В. Стрельчук // Укр. фiз. журн. 56, №4, 384-391 (2011).
    10. Влияние примеси Sn на оптические и структурные свойства тонких кремниевых плёнок В.В. Войтович, В.Б. Неймаш, Н.Н. Красько, А.Г. Колосюк, В.Ю. Поварчук, Р.М. Руденко, В.А. Макара, Р.В. Петруня, В.О. Юхимчук, В.В. Стрельчук // ФТП 45, 10, 1331-1335 (2011).
    11. Mechanism of AlN film formation at thermochemical nitridization of sapphire Kh.Sh.-ogly Kaltaev, S.V.Nizhankovskiy, N.S.Sidelnikova, M.A.Rom, A.Ya.Dan'ko, M.V.Dobrotvorskaya, A.Ye.Belyaev, V.V.Strelchuk, A.F.Kolomys  // Functional materials 18, 1, 41-49 (2011).
    12. Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys  // Semiconductor Physics, Quantum Electronics & Optoelectronics 14, 1, 127-129 (2011).
    13. Probing plasmonic system by the simultaneous measurement of Raman and fluorescence signals of dye molecules M.M. Dvoynenko, Z.I. Kazantseva, V.V. Strelchuk, O.F. Kolomys, E.G. Bortshagovsky, E.F. Venger, P. Tronc // Semiconductor Physics, Quantum Electronics & Optoelectronics 14, 2, 195-199 (2011).
    14. Комплексні дослідження кремнієвого матеріалу для сонячної енергетики В.Г. Литовченко, Б.М. Романюк, В.Г. Попов, В.П. Мельник, О.С. Оберемок, В.П. Кладько, І.П. Лісовський, В.В. Стрельчук, К.В. Шаповалов, В.В. Черненко // Металлофизика и новейшие технологии, 33, 873-898 (2011).
    15. Carrier transfer effect on transport in p-i-n structures with Ge quantum dots V. S. Lysenko, Yu. V. Gomeniuk, V. V. Strelchuk, A. S. Nikolenko, S. V. Kondratenko, Yu. N. Kozyrev and M. Yu. Rubezhanska, C. Teichert // Phys. Rev. B 84, 115425 (2011).
    16. Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies V.V. Strelchuk, V.P. Bryksa, K.A. Avramenko, P.M. Lytvyn, M.Ya. Valakh, V.O. Pashchenko, O.M. Bludov, C. Deparis, C. Morhain, P. Tronc // Semiconductor Physics, Quantum Electronics & Optoelectronics 14, 1, 31-40 (2011).
    17. Photoluminescence and Raman light scattering in spatially inhomogeneous heteroepitaxial InGaN layers V.N. Pavlovskii, E.V. Lutsenko, G.P.  Yablonskii, O.F. Kolomys, V.V. Strelchuk, E.A. Avramenko, M. Ya. Valakh // Journal of Applied Spectroscopy 78, 4, 553-559 (2011).
    18. Существенное изменение полос Аg(2), Hg(7,8) фуллеритов С60 в спектрах КР  при взаимодействии с металлами, электронном и лазерном облучении Н.Е. Корниенко, Н.П. Кулиш, Е.Л. Павленко, В.В. Cтрельчук // Сборник научных статей «Фуллерены и наноструктуры в конденсированных средах», Минск, Издательский центр БГУ, с.6 (2011).
    19. Полимеризация фуллеритов С60 при легировании атомами металлов Е.Л. Павленко, О.П. Дмитренко, Н.П. Кулиш, В.А. Брусенцов, Н.Е. Корниенко, В.В. Стрельчук, Э.М. Шпилевский // Сборник научных статей «Фуллерены и наноструктуры в конденсированных средах», Минск, Издательский центр БГУ, с.6 (2011).
    20. Хемічна взаємодія та полімеризація у плівках С60—Sn О. Л. Павленко, М. П. Куліш, О. П. Дмитренко, М. Є. Корнієнко, А. І. Момот, В. А. Брусенцов, Ю. Є. Грабовський, Е. М. Шпілевський, В. В. Стрельчук, О. Д. Рудь, В. М. Ткач // Наносистеми, наноматеріали, нанотехнології 9, 2, 291-306 (2011).
    21. Комплексоутворення та полімеризація фуллеритів С60 при леґуванні металами О. Л. Павленко, О. П. Дмитренко, М. П. Куліш, Ю. Є. Грабовський, В. А. Брусенцов, М. Є. Корнієнко, А. І. Момот, А. C. Ніколенко, В. М. Ткач, О. М. Рудь, Е. М. Шпілевський // Наносистеми, наноматеріали, нанотехнології 9, 3, 691-718 (2011).
    22. Реверсивне фотопотемніння в композитних наноструктурах As2S3/SiOx Данько В.А., Індутний І.З., Коломис О.Ф., Стрельчук В.В., Шепелявий П.Є. //Оптоэлектроника и полупроводниковая техника 46, 103 (2011).
    23. Vibrational Raman spectra of CdSxSe1-x magic-size nanocrystals Volodymyr Dzhagan, Nikolai Mel'nik, Olexandra Rayevska, Galyna Grozdyuk, Viktor Strelchuk, Olga Plyashechnik, Stepan Kuchmii, Mykhailo Valakh // Rapid Research Letters 5, 7, 250-252 (2011).
    24. Структурні перетворення в плівках ZnO при їх легуванні Нітрогеном та AlN співлегуванні А.І. Євтушенко, Г.В. Лашкарьов, В.В. Стрельчук, В.Й. Лазоренко, Л. О. Клочков, О.С. Литвин, В.М. Ткач, А.С. Романюк, К.А. Авраменко, О.І. Биков, В. А. Батурин, О.Ю. Карпенко // Металофізика та новітні технології, Спецвипуск, Т.33, с. 243-254 (2011).


    1. Рентгеновская дифрактометрия и сканирующая микро-рамановская спектроскопия неоднородностей структуры и деформаций по глубине многослойной гетероструктуры InGaN/GaN Стрельчук В.В., Кладько В.П., Авраменко К.А., Коломыс А.Ф., Сафрюк Н.В., Конакова Р.В., Явич Б.С., Валах М.Я., Мачулин В.Ф., Беляев А.Е // ФТП 44, 9, 1236-1247 (2010).
    2. Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers M.Ya.Valakh, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Z.F. Krasilnik, D.N. Lobanov, A.V. Novikov // Appl. Phys. Lett. 96, 141909 (2010).
    3. High quality ZnO films deposited by radio-frequency magnetron sputtering using layer by layer growth method A.I. Ievtushenko, V.A. Karpyna, V.I. Lazorenko, G.V. Lashkarev, V.D. Khranovskyy, V.A. Baturin, O.Y. Karpenko, M.M. Lunika, K.A. Avramenko, V.V. Strelchuk, O.M. Kutsay // Thin Solid Films 518, 16, 4529-4532 (2010).
    4. Effect of nitrogen doping on photoresponsivity of ZnO films A.I. Ievtushenko, G.V. Lashkarev, V.I. Lazorenko, V.A. Karpyna, M.G. Dusheyko, V.M. Tkach, L.A. Kosyachenko, V.M. Sklyarchuk, O.F. Sklyarchuk, K.A. Avramenko, V.V. Strelchuk, Z.J. Horvath // Physica Status Solidi (A) Applications and Materials 207, 7, 1746-1750 (2010).
    5. Metal-filled polytetrafluoroethylene nanostructered thin film Grytsenko, K., Kolomzarov, Y., Lytvyn, O., Strelchuk, V., Ksianzou, V., Schrader, S., Beyer, H., Servet, B., Enouz-Vedrenne, S., Garry, G., Schulze, R.D., Friedrich, J. // Advanced Science Letters 3, 3, 308-312 (2010).
    6. Molecular ruler based on concurrent measurements of enhanced Raman scattering and fluorescence M. M. Dvoynenko, Z. I. Kazantseva, V. V. Strelchuk, O. F. Kolomys, E. F. Venger, and J.-K. Wang // Optics Letters, 35, 22, 3808-3810 (2010).
    7. SERS of dye film deposited onto gold nano-clusters K. Grytsenko, Yu. Kolomzarov, O. Lytvyn, T. Doroshenko, V. Strelchuk // Semiconductor Physics, Quantum Electronics & Optoelectronics, 13, 2, 151-153 (2010).
    8. Зсув стокса в квантових точках CdTe І.М. Купчак, Д.В. Корбутяк, С.М. Калитчук, Ю.В. Крюченко, В.В. Стрельчук, А.Й. Шкребтій // Журнал фізичних досліджень 14, 2, 2701-1-2701-10 (2010).
    9. Raman spectroscopy of the laser irradiated titanium dioxide Strelchuk V.V., Budzulyak S.I., Budzulyak I.M., Ilnytsyy R.V., Kotsyubynskyy V.O., Segin M.Ya., Yablon L.S. // Semiconductor Physics, Quantum Electronics & Optoelectronics, 13, 3, 309 - 313 (2010).


    1. Three-dimensional ordering in self-organized (In,Ga)As quantum dot multilayer structures V.P. Kladko, М.V. Slobodian, P.M. Lytvyn, V.V. Strelchuk, Yu.I. Mazur, E. Marega, M. Hussein and G.J. Salamo // Phys. Stat. Solidi (a) 206, 8, 1748-1751 (2009).
    2. Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate V. P. Kladko, A. F. Kolomys, M. V. Slobodian, V. V. Strelchuk, V. G. Raycheva, A. E. Belyaev, S. S. Bukalov, H. Hardtdegen, V. A. Sydoruk, N. Klein, and S. A. Vitusevich //Journal of Applied Physics 105, 063515 (2009).
    3. Band-edge absorption spectroscopy of CdSe / a -SiOx multilayer nanocomposites P.E. Shepelyavyj, I.Z. Indutnyj, V.P Bryksa, V.P. Kunets, V.P. Kunets // Physica E: Low-Dimensional Systems and Nanostructures 41 (3), 436-440 (2009).


    1. Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains V. V. Strelchuk, Yu. I. Mazur, Zh. M. Wang, M. Schmidbauer, O. F. Kolomys, M. Ya. Valakh, M. O. Manasreh, G. J. Salamo // J Mater.Sci.: Mater.Eectr. 19, 8-9, 692-698 (2008).
    2. Band offsets and photocurrent spectroscopy of Si/Ge heterostructures with quantum dots S.V. Kondratenko, A.S. Nikolenko, O.V. Vakulenko, M.Ya. Valakh, V.O. Yukhymchuk, A.V. Dvurechenskii, A.I. Nikiforov // Nanotechnology 19, 145703-145707 (2008).
    3. Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition P.M.Lytvyn, Yu.I.Mazur, E.Marega Jr, V.G.Dorogan, V.P.Kladko, M.V.Slobodian, V.V.Strelchuk, M.L.Hussein, M.E.Ware, G.J.Salamo // Nanotechnology 19, 505605 (2008).
    4. Disordered Kondo-lattice model: Extension of coherent potential approximation V. Bryksa, W. Nolting // Physical Review B - Condensed Matter and Materials Physics 78 (6), 064417 (2008).
    5. Disordered correlated Kondo-lattice model V. Bryksa, W. Nolting  // Journal of Magnetism and Magnetic Materials 320 (5), 699-708 (2008).


    1. Влияние латеральных модуляций состава на зарождение и упорядочение массива квантовых островков в многослойных периодических структурах InхGa1-хAs/GaAs В.П. Кладько, В.В.Стрельчук, Н.В.Слободян, А.Н.Ефанов, В.Ф.Мачулин, Yu. I. Mazur, Zh. M. Wang, G. J. Salamo // Наносистеми, наноматеріали, нанотехнології 5, 3, 729-738 (2007).
    2. Structural anisotropy of InGaAs/GaAs(001) quantum dot chains structures V.P. Kladko, M.V. Slobodian, V.V. Strelchuk, O.M. Yefanov, V.F. Machulin, Yu.I. Mazur, Zh.M. Wang, and G.J. Salamo // Phys. Stat. Sol. (a) 204, 8, 2567–2571 (2007).
    3. Optical and photoelectrical properties of GeSi nanoislands M.Ya. Valakh, V.M. Dzhagan, V.O. Yukhymchuk, O.V. Vakulenko, S.V. Kondratenko, A.S. Nikolenko, Semiconductor Science and Technology 22, 326-329 (2007).
    4. Продольная фотопроводимость гетероструктур Ge/Si с квантовыми точками Ge С.В. Кондратенко, А.С. Николенко, О.В. Вакуленко, С.Л. Головинский, Ю.Н. Козырев, М.Ю.Рубежанская, А.И. Водяницкий // ФТП 41, 955- 958 (2007).
    5. Photoconductivity spectra of Ge/Si heterostructures with Ge QDs O.V. Vakulenko, S.V. Kondratenko, A.S. Nikolenko, S.L. Golovinskiy, Yu.N. Kozyrev, M.Yu.Rubezhanska, A.I. Vodyanitsky // Nanotechnology 18, 185401-185405 (2007).
    6. Two-dimensional ordering of In(Ga)As quantum dots in vertical multilayers grown on GaAs(100) and (N11) P. M. Lytvyn, V. V. Strelchuk, O. F. Kolomys, I. V. Prokopenko, M. Ya. Valakh, Yu. I. Mazur, Zh. M. Wang, G. J. Salamo, M. Hanke // Applied Physics Letters 91, 173118 (2007).
    7. Латеральное упорядочение квантових точек и нитей в многослойных структурах (In,Ga)As/GaAs(100) В.В. Стрельчук, П.М. Литвин, А.Ф. Коломыс, М.Я. Валах, Yu.I. Mazur, Zh.M. Wang, G.J. Salamo // ФТП 41, 74 (2007).
    8. Microstructural aspects of nucleation and growth of (In,Ga) As/GaAs(001) islands with low indium content Kladko V.P., Strelchuk V.V., Kolomys А.F., Slobodian M.V., Mazur Yu.I., Wang Z.M., Kunets Vas.P., Salamo G.J. // Journal of Electronic Materials 36, 12, 1555-1561 (2007).


    1. Fields of deformation anisotropy exploration in multilayered (In,Ga)As/GaAs structures by high-resolution X-ray scatteringO. Yefanov, V. Kladko, O. Gudymenko, V.Strelchuk, Yu.Mazur, Zh.Wang, G.Salamo // Phys. Stat. Sol. (a) 203, 154–157 (2006).
    2. Влияние анизотропии полей деформации в многослойных структурах на спектры отражения рентгеновских лучейА.Н. Ефанов, В.П. Кладько, А.И. Гудыменко, В.В. Стрельчук, Ю. Мазур, Чж. Ванг, Г. Саламо // Металлофизика новейшие технологии. /Metall. phys. and Adv. Technol. 28, 4, 441—448 (2006).
    3. Investigation of indium distribution in InGaAs/GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scatteringYu. I. Mazur, Zh. M. Wang, and G. J. Salamo, V. V. Strelchuk, V. P. Kladko, V. F. Machulin, and M. Ya. Valakh, M. O. Manasreh // Journal of Applied Physics 99, 2, 023517 (2006).
    4. Photoresponse in Ge/Si nanostructures with quantum dots A.SNikolenkoS.VKondratenkoO.VVakulenko // SemiconductorPhysicsQuantum Electronics & Optoelectronics 9, 32-35 (2006).
    5. LateralphotoconductivityofSi/Gestructureswithquantumdots S.VKondratenkoS.LGolovinskiyA.SNikolenkoO.VVakulenko// Semiconductor Science and Technology 21, 857-859 (2006).
    6. Luminescence studies of heat treatment influence on size distribution of CdTe nanocrystals S.G. Krylyuk, V.V. Strelchuk, S.M. Kalytchuk, D.V. Korbutyak, M.Ya. Valakh, Yu.B. Khalavka, P.I. Feychuk, L.P. Shcherbak // Physica Status Solidi C: Conferences 3 (4), 1074-1077 (2006) 
    7. Influence of anisotropy of fields of deformation in multi-layered structures on spectra of reflection of x-rays O.M. Yefanov, V.P. Klad'ko, O.I. Gudymenko, V.V. Strelchuk, Yu. Mazur, Zh. Wang, G. Salamo // Metallofizika i Noveishie Tekhnologii 28 (4), 441-448 (2006).

before 2005

    1. Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study V.V. Strelchuk, V.P. Kladko, O.M. Yefanov, O.F. Kolomys, O.I. Gudymenko, M.Ya. Valakh, Yu.I. Mazur, Z.M. Wang, and G.J. Salamo // Semiconductor Physics, Quantum Electronics & Optoelectronics 8, 36-45 (2005).
    2. Modification of properties of (In, Ga)As/GaAs multilayer nanostructures with quantum wires by using thermal annealing V.V. Strelchuk, M.Ya. Valakh, E.G. Gule, A.F. Kolomys, M.P. Lisitsa, Yn.I. Mazur, Z.M. Wang, G.J. Salamo // Nano - i Mikrosistemnaya Tekhnika 9, 10-18 (2005).
    3. Microsize defects in InGaAs/GaAs (N11)A/B multilayers quantum dot stacks P.M. Lytvyn, I.V. Prokopenko, V.V. Strelchuk, Yu.I. Mazur, Zh.M. Wang, G.J. Salamo // Journal of Crystal Growth 284 (1-2),  47-56 (2005).
    4. Resonant raman scattering and atomic force microscopy of InGaAs/GaAs multilayer nanostructures with quantum dots M.Ya. Valakh, V.V. Strelchuk, A.F. Kolomys, Yu.I. Mazur, Z.M. Wang, M. Xiao, G.J. Salamo // Fizika i Tekhnika Poluprovodnikov 39 (1), 140-144 (2005).
    5. Strong optical nonlinearity in strain-induced laterally ordered In0.4Ga0.6As quantum wires on GaAs (311)A substrate Yu.I. Mazur, Zh.M. Wang, G.G. Tarasov, H. Wen, V. Strelchuk, D. Guzun, M. Xiao, M.B. Johnson // Journal of Applied Physics 98 (5), 053711, 1-7 (2005).
    6. Resonant Raman scattering and atomic force microscopy of InGaAs/GaAs multilayer nanostructures with quantum dots M.Ya. Valakh, V.V. Strelchuk, A.F. Kolomys, Yu.I. Mazur, Z.M. Wang, M. Xiao, G.J. Salamo // Semiconductors 39 (1), 127-131 (2005).
    7. Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100) Z.M. Wang, Yu.I. Mazur, G.J. Salamo, P.M. Lytvin, V.V. Strelchuk, M.Ya.Valakh // Applied Physics Letters 84 (23), 4681-4683 (2004).
    8. Effective renormalization of the exchange interaction at very narrow energy gap in II-VI diluted magnetic compounds V.P. Bryksa, G.G. Tarasov // Journal of Alloys and Compounds 371 (1-2), 100-102 (2004).
    9. A Model of Photoinduced Annealing of Intrinsic Defects in Hexagonal CdSxSe1-x Quantum Dots V.P. Kunets, N.R. Kulish, M.P. Lisitsa, V.P. Bryksa // Semiconductors 38 (4), pp. 447-450 (2004).
    10. Резонансное стоксовое и антистоксовое комбинационное рассеяние света в наноструктурах CdSe / ZnSe М.Я. Валах, В.В. Стрельчук, Г.Н. Семенова, Ю.Г. Садофьев // ФТТ 46, 1, 174-176(2004).
    11. Атомно-силовая микроскопия и рамановское рассеяние света лазерно-индуцированного структурного разупорядочения на поверхности p-CdTe В.В. Артамонов, А. Байдуллаева, А.И. Власенко, Н.В. Вуйчик, О.С. Литвин, П.Е. Мозоль, В.В.Стрельчук // ФТТ 46, 8, 1489-1493 (2004).
    12. Properties of As+-implanted and annealed GaAs and InGaAs quantum wells: Structural and band-structure modifications J.W. Tomm, V. Strelchuk, A. Gerhardt, U. Zeimer, M. Zorn, H. Kissel, M. Weyers, and J. Jimnez // J. Appl. Phys. 95, 1122 (2004).
    13. Anti-Stokes photoluminescence and structural defects in CdSe/ZnSe nanostructures M.Ya. Valakh, N.O. Korsunska, Yu.G. Sadofyev, V.V. Strelchuk, G.N. Semenova, L.V. Borkovska, V.V. Artamonov, M.V. Vuychik  // Materials Science and Engineering: B  101, 1–3, 15, 255–258 (2003).
    14. Optical investigations of the influence of point defects on quantum dots in CdSe/ZnSe heterostructures G.N. Semenova, Ye.F. Venger, M.Ya. Valakh, Yu.G. Sadofyev, N.O. Korsunska, V.V. Strelchuk, L.V. Borkovska, V.P. Papusha and M.V. Vuychik //  J. Phys.: Condens. Matter 14, 48, 13375 (2002).
    15. Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence M. Ya. Valakh, Yu.G. Sadofyev, N.O. Korsunska, G.N. Semenova, V.V. Strelchuk, L.V. Borkovska, M.V. Vuychik, M.Sharibaev // Semiconductor Physics, Quantum Electronics & Optoelectronics 5, 254-257 (2002).
    16. High-efficiency up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix V.V. Strelchuk, M.Ya. Valakh, M.V. Vuychik, S.V. Ivanov, P.S. Kopev, T.V. Shubina // Semiconductor Physics, Quantum Electronics & Optoelectronics 5, 343-346 (2002).
    17. Relaxation of amorphous structure of implanted Si under RF plasma treatment: Raman and EPR study V. V. Artamonov, V. S. Lysenko, A.N. Nasarov, V.V. Strelchuk, M.Ya. Valakh and I.M. Zaritskii // Semicond. Sci. Technol. 6, 1, 1 (1991).
    18. Raman scattering by tellurium films on CdTe single crystals V.V. Artamonov, M.Ya. Valakh, V.V. Strelchuk, A.Baidullaeva and P.E. Mozol // Journal of Applied Spectroscopy 48, Number 6, 653-655 (1988).