V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine
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Semiconductor material
Department of Physics detectors and nonequilibrium processes in complex semiconductors
Publications
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Влияние уровня возбуждения и электрического поля на релаксацию фотопроводимости поликристаллических слоев CdxHg1‑xTe/GaAs
Semiconductor material
Department of Structural analysis of materials and systems
Department of Optics semiconductors
Department of Electrical and galvanomagnetic properties of semiconductors
Department of Physics detectors and nonequilibrium processes in complex semiconductors
Materials Technology Laboratory for Optoelectronics
Department Ion Beam Engineering
Photovoltaics and Energy Efficiency
Sensory system
Semiconductor infrared and microwave technology
Perspective and innovation
Details
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Власенко А.И.,
Гнатюк В.А., Городниченко Е.С., Мозоль П.Е. // ФТТ.- 2000.- т.34, №7. - С.1187-1192.