Інститут фізики напівпровідників ім. В.Є. Лашкарьова НАН України
Національна академія наук України

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Sub-THz active assembly with mechanical scanning for security systems

Purpose:

Inspection of content in packages that are transparent in sub-terahertz spectral range (paper, plastic, polyfoam, gypsum plasterboard, unhumid wood, footwear sole, knapsacks, etc.)

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The visible and near-infrared spectrum camera for surveillance at low light conditions

The developed camera (production - end of 2016) that is based on matrix solid-state photodetector with charge-coupled devices (CCD ) and electron multiplying designed for use in vehicles aiming, targeting and surveillance in low light (down to 3x10-4 lux, starry sky with solid cloud cover). Camera is an intensifiers alternative that complement information obtained by thermal and visual systems imaging. Unlike thermal imaging the camera records the weak reflected radiation which simplifies operator work with object recognition.

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Sub-THz active assembly for security applications

Basic technical features:

  • Active mode (using a sub-THz radiation source);
  • Operation radiation frequency: ν ~ 75, ~94, ~140 GHz (bi-frequency radiation sources mode can be available);
  • Detection array: linear array of FET sub-THz detectors;
  • Number of pixels in imagery: >= 2.5*104 (>= 128x200);
  • Detection of dust drugs, pills, blades, ceramics, and other metallic and non-metallic enclosures;

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Integral absolute, differential and gauge pressure sensors

№25 Laboratory  of anisotropic semiconductors
G.G. Babichev, E.O. Zinchenko, S.I. Kozlovskiy

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Lasers and laser systems for medicine

№22 Department semiconductor infrared Photoelectronics
   V.V. Tetorkіn, L.F. Linnik

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Surface plasmon resonance spectrometeR ”PLASMON-5”

№27 Department of Physics and technological bases of sensory materials
Y.V. Ushenin

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Focal plane array with microcooler

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F.F. Sizov, V.V. Zabudsky, Yu.A. Melenevsky

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128х128 and 4х288 multielement array photodetectors, based on CdHgTe epitaxial layers

№38 The Department for Physics and Technology of Low- Dimensional Systems
F.F. Sizov, Z.F. Tsybrii

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Mm and sub-mm (THz) detectors based on CdHgTe

№38 The Department for Physics and Technology of Low- Dimensional Systems
F.F. Sizov, V. M. Dobrovolsky

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Системы Кремния-На-Изоляторе (КНИ) и КМОН КНИ - интегральная микросхема ВА86Р

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В.С.Лысенко, А.Н. Назаров, Л. И. Самотовка

 

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Анализатор газовых смесей  «Электронный нос» ГАЗ-2

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    И.А. Кошец, З.И. Казанцева

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The device for measurement and registration of H2S low concentration in ambient

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V.G. Litovchenko, T. I. Gorbanyuk

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Surface plasmon resonance spectrometer “PLASMON 6”

№27 Department of Physics and technological bases of sensory materials
Yu. M. Shirshov, Y.V. Ushenin

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Измерительно-вычислительный комплекс для диагностики жидкокристаллических дисплеев СМ-100

№13 Отдел жидких кристаллов
   В.М. Сорокин

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Development of thermal detector elements based on two-dimensional photonic sislicon structures

№20 Department of photonic semiconductor structures
   L.A. Karachevtseva

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Measuring Equipment for Flash Characterization of Photovoltaic Modules

№41 Department of Physical and technical bases semiconductor fotoenerhetyky
   Anatoliy P. Gorban

 

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Somatic cells detector ASK-1

№16 Department of optoelectronic functional transducers
E.P. Matzas, A.S. Pavluchenko, A.L. Kukla

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Sensors of infrared radiation

№26 Department of Physical Chemistry of semiconductor materials
A.V. Sukach

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Development and fabrication of radiation-stable detectors of gamma-radiation based on CdTe and CdZnTe monocrystals

№47 Division of semiconductor radiation detectors
D.V. Korbutyak

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Silicon pressure sensors with separating diaphragm

№25 Laboratory anisotropic semiconductors
    S.І. Kozlovsky

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Кремниевые датчики давления типа ИПТ

№25 Лаборатория анизотропных полупроводников
    С.И. Козловский

 

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