V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine

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S.V. Plyatsko, J.E. Kulumbetov, A.A. Osmonalieva, G.K. Tolbaeva, "Operation property of PbTe by laser epitaxy", / Herald of the IUK, Bishkek, 2016. P.71-77.
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S.V. Plyatsko, J.E. Kulumbetov, A.A. Osmonalieva, G.K. Tolbaeva, "Physical and photoelectrical properties of PbTe/BaF2 obtained in nonequilibrium condition" / Herald of the IUK, Bishkek, 2016. P. 78-86.
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S. Rubio, N. Sochinskii, E. Repiso, Z. Tsybrii, F. Sizov, J. L. Plaza, E. Diéguez, "Hg1−xCdxTe vapor deposition on CdZnTe substrates by Closed Space Sublimation technique" / Journal of Crystal Growth, 417, 211-214, March 2016, doi: 10.1016/j.jcrysgro.2016.02.035.
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A.G. Golenkov, F.F. Sizov, "Performance limits of terahertz zero biased rectifying detectors for direct detection" / Semiconductor Physics, Quantum Electronics & Optoelectronics, V. 19, N 2. P. 129-138, 2016.

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