V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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1. D. Coquillat, V. Nodjiadjim, S. Blin, A. Konczykowska, N. Dyakonova, C. Consejo, P. Nouvel, A. Pènarier, J. Torres, D. But, S. Ruffenach, F. Teppe, M. Riet, A. Muraviev, A. Gutin, M. Shur, and W. Knap, “High-speed room temperature terahertz detectors based on InP double heterojunction bipolar transistors” / Int. J. High Speed Electron. Syst., vol. 25, no. 3–4, 2016.