Compensation and carrier trapping in indium-doped CdTe: Contributions from an important near-mid-gap donor

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

V. Babentsov, J. Franc, R.-B. James // Appl. Phys. Lett., V. 94, iss.5, pp. 052102-3, 2 February 2009

Nav view search