New insight in Scandium-mediated growth techniques: Sc-related defects in 4H-SiC and 6H-SiC

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

U. Gerstmann, S. Greulich-Weber, E. Rauls, J.-M. Spaeth, E.N. Kalabukhova, E.N. Mokhov, F. Mauri // Mat. Sci. Forum, v.556-557, р.469-472 (2007)

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