V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine

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Academician O.E. Belyaev, Director of   V.E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine. V.E. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine- 58 years in the National Academy of Science of Ukraine

 

5

V.P. Kostylyov, A.V. Sachenko. Semiconductor photovoltaics: сurrent state and actual directions of research

 

13
V.I. Chegel, A.M. Lopatynskyi. Molecular plasmonics – a novel research field in materials science and sensing. Applications and theoretical background (review) 38

A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk, S.P. Trotsenko. InAs photodiodes (Review. Part IV)

 

60

L.V. Zavyalova, G.S. Svechnikov, N.N. Roshchina, B.A. Snopok. Preparation and characterization of АІ-VІІІВVІ semiconductor films and the functional structures based on them: features and capabilities of the CVD method using dithiocarbamates

 

83

L.O. Revutska, Z.L. Denisova, A.V. Stronski. Application of spin-coated chalcogenide films: manufacturing, properties, applicationS (review)

124

 

V.Morozhenko. Transmission, reflection and thermal radiation of magneto-optical resonator structures in the infrared spectral range: research and application (review)

 

149

V.S. Kretulis, I.E. Minakova, P.F. Oleksenko, V.M. Sorokin. Optoelectronic neflometric meter of the atmospheric environment meteoparameters 

 

161

K.V. Michailovska, В.А. Dan’ko, O.Y. Gudymenko, V.P. Klad’ko, I.Z. Indutnyi, P.E. Shepeliavyi, M.V. Sopinskyy. Photoluminescence properties of silicon nanoparticlesinmultilayered (SiOx-SiOy)n structures with porousinsulatinglayers

 

169

V.P. Veleschuk, A.I. Vlasenko, Z.K. Vlasenko, D.N. Khmil’, O.M. Kamuz, S.G. Nedilko, V.P. Scherbatsky, D.V. Gnatyuk, V.V. Borshch, M.P. Kisselyuk. The mechanisms of the appearance of visible parasitic luminescence in the ultraviolet LED’s 365 nm

 

181

V.P. Maslov, A.V. Sukach, V.V. Tetyorkin, M.Yu. Kravetskii, N.V. Kachur, Ye.F. Venger, A.T. Voroschenko, I.G. Lutsishin, I.M. Matiyuk, A.V. Fedorenko. Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes

188

 

Ya.M. Olikh, M.D. Tymochko, M.I. Ilashchuk. relaxation factors of acoustic conductivity in CdTe

 

199

K.S. Dremliuzhenko, O.A. Kapush, S.D. Boruk,* D.V. Korbutyak. Properties of highly dispersed cadmium telluride systems obtained by electrospray method

 

213

K.V. Kostyukevych, Yu.M. Shirshov, R.V. Khristosenko, A.V. Samoylov, Yu.V. Ushenin, S.A.Kostyukevych, A.A. Koptiukh. Angular spectrum peculiarities of surface plasmon-polariton resonance under investigation of latex water suspension in the Kretschmanngeometry

 

220

A. Meshalkin, A.P. Paiuk, L.A. Revutska, E. Achimova, A.V. Stronski, A. Prisakar, G. Triduh, V. Abashkin, A. Korchevoy, V.Yu. Goroneskul. Direct surface-relief grating recording using selenium layers

 

240

V.F. Onyshchenko, M.I. Karas’. Relaxation of photoconductivity in macroporous silicon

 

248

G.PMalanych, V.M. Tomashik. Formation of polished surface of PbTe and Pb1-xSnxTe semiconductor plates

 

254

 G.V. Dorozinsky, H.V. Dorozinska, V.P. Maslov. Features of refractometric characteristics of surface plasmon resonance of motor oils for use

 

 261

N.I. Karas, V.F. Onyshchenko. Monopolar photoconductivity of the inversion layer and “slow”-surface levels in the structures of macroporous and monocrystalline silicon in condition of strong surface lighting

 

268

I.E. Matyash, I.A. Minaіlova, O.N. Mishchuk, B.K. Serdega. Component analysis of phonon spectra dychroidism in uniaxially deformed silicon crystal

 

273

Information for authors of «Optoelectronics and Semiconductor Technics»

 

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CONTENTS

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