Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

Tamara Rudenko, Ran Yu, Sylvain Barraud, Karim Cherkaoui, and Alexey Nazarov, IEEE Electron Device Letters, vol. 34, N 8, pp.957-959 (2013)

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