Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

Alt H.Ch., Gomeniuk Y.V., Bittersberger F., Kempf A., and Zemke D.. Appl. Phys. Lett., 87, 151909-1–151909-3. (2005)

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