Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

Gebel T., Rebohle L., Skorupa W., Nazarov A.N., Osiyuk I.N., and Lysenko V.S, Appl. Phys. Lett., 81, 2575-2576. (2002)

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