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V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine |
Research divisions Publications dep02 dep-02-2017 Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatmentAlexei N. Nazarov, a) Volodymyr O. Yukhymchuk, Yurii V. Gomeniuk, Sergiy B. Kryvyi, Pavel N. Okholin, Petro M. Lytvyn, Vasyl P. Kladko, Volodymyr S. Lysenko, Volodymyr I. Glotov, Illya E. Golentus, Enrico Napolitani, Ray Duffy. // Journal of Vacuum Science and Technology, B, V.35, Issue 5, 051203 (2017). http://doi.org/10.1116/1.4996139
