CONDITIONS OF GROWING OF EPITAXIAL LAYERS FOR SEMICONDUCTOR STRUCTURES FROM UNDERSATURATED SOLUTION-MELT

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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lab10-2-2017

CONDITIONS OF GROWING OF EPITAXIAL LAYERS FOR SEMICONDUCTOR STRUCTURES FROM UNDERSATURATED SOLUTION-MELT

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TsybulenkoV. V., ShutovS. V., YerochinS. Yu. //ProceedingsoftheXVIIINTERNATIONALYOUNGSCIENTISTS’ CONFERENCE ON APPLIED PHYSICS,May 23-27, 2017, Kyiv, Ukraine. – P. 107-108.

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