Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Details: Hits: 6060

Tamara Rudenko, Alexey Nazarov, Isabelle Ferain, Samaresh Das, Ran Yu, Sylvain Barraud, and Pedram Razavi, Applied Physics Letters, vol.101, p. 213502 (2012)

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