Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk// Phys. Quantum Electronics and Optoelectronics, v. 4, No.2, p. 75-81 (2001)

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