Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

You are here: Home

Lysenko V.S., Tyagulski I.P., Gomeniuk Y.V., Osiyuk I.N. Microelectronics Reliability, v.40, p. 799-802. (2000)

Nav view search