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T. Rudenko, Electron Technology, v.32, N1/2, pp.110-115. (1999)
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V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine |
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Research divisions Publications dep15 dep-15-before Evaluation of generation and recombination parameters of SOI MOS structures from gated-diode measurements
Research divisions Publications dep15 dep-15-before Evaluation of generation and recombination parameters of SOI MOS structures from gated-diode measurements