High gate voltage drain current leveling off and its low-frequency noise in 65 nm fully-depleted strained and non-strained SOI nMOSFETs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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N. Lukyanchikova, N. Garbar, V. Kudina, A.Smolanka, E.Simoen and C.Claeys, // Solid-State Electronics – 2008. – I. 52, № 5. - P. 801-807.

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