Explaining the parameters of the electron valence-band tunnelling related Lorentzian noise in fully depleted SOI MOSFETs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Simoen E., Mercha A., Rafí J.M., Claeys C., Lukyanchikova N.B., and Garbar N. // IEEE Electron Device Lett. – 2003. Vol. 24, № 12. P. 751-754.

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