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KorovinA.V., AlvarezJ., KleiderJ.-P. // Energy Procedia 92, 2016, - P. 103–108.
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V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine |
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Research divisions Publications dep14 dep-14-2016 Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells.
Research divisions Publications dep14 dep-14-2016 Influence of the dopant penetration depth on the solar cell performance of n-type interdigitated back contact silicon solar cells.