Single trap kinetic in Si nanowire FETs: effect of gamma radiation treatment

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Zadorozhnyi I., Li J., Pud S., Petrychuk M., Vitusevich S. // MRS advances.-2016.-V.1.-N.56.-P. 3755-3760

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