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CONTENTS
A.I. Vlasenko, V.P. Veleschuk, M.P. Kisselyuk, Z.K. Vlasenko, I.O. Lyashenko, O.V. Lyashenko. Acoustic emission of the light emitting diodes (review) |
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A.V. Sukach, V.V. Tetyorkin, I.M. Matiyuk, A.I. Tkachuk. InAs photodiodes (review)
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V.A. Dan’ko, I.Z. Indutnyy, M.V. Lukaniuk, V.I. Myn’ko, S.S. Ponomarjov, P.E. Shepeliavyi, V.O.Yukhymchuk. Photolithography on photostimulated reversible and transient structural changes in CHG |
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Ya.Ya. Kudryk. Methods for creation and properties of ohmic contacts to indium phosphide (rewiev)
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P.I. Baranskii, G.P. Gaidar. Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation
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A.P. Paiuk, A.Yu. Meshalkin, A.V. Stronski, E.A. Achimova, S.A. Sergeev, V.G. Abashkin, O.S. Lytvyn, P.F. Oleksenko, A.M. Prisacar, G.M. Triduh, E.V. Senchenko. E-beam and holographic recording of surface relief structures by using the Ge5As37A58–se multilayer nanostructures as registering media
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S.P. Rudenko, M.O. Stetsenko, I.M. Krishchenko, L.S. Maksimenko, E.B. Kaganovich, B.K. Serdega. Diagnostic of localized surface plasmon resonances on porous gold films
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G.P. Malanych, V.M. Tomashik, I.B. Stratiychuk, Z.F. Tomashik. Chemical etching of PbTe and Pb1–xSnxTe single crystals by using H2O2–HBr solutions with different initial HBr concentrations
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E.V. Kostyukevich, S.A. Kostyukevich, A.A. Kudryavtsev, N.L. Moskalenko. Analysis of changes in optical characteristics of polycrystalline gold films under the influence of low-temperature annealing
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V.A. Dan’ko, M.L. Dmytruk, I.Z. Indutnyy, S.V. Mamykin, V.I. Myn’ko, P.M. Lytvyn, M.V. Lukaniuk, P.E. Shepeliavyi. Formation of submicron periodic plasmon structures of large area by using the interference lithography method with vacuum photoresists
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R.V. Khristosenko, Ye.V. Kostyukevich, Yu.V. Ushenin, A.V. Samoylov. Improvement of exploitation parameters of transducers based on surface plasmon resonance via optimization of optical parts in sensor devices of the “plasmon” type
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V.F. Onyshchenko. Distribution of non-equilibrium charge carriers in macroporous silicon structure under conditions of their homogeneous generation over the simple bulk
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S.V. Svechnikov. To the 50th issue of “Optoelectronics and Semiconductor Technique” |