The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Babentsov V.N., Boyko V.A., Kolomys A.F., Shepelski G.A., Strelchuk V.V, Tarbaev N.I. // Advanced Materials Research.- 2011.- V. 276.- p. 185-190.

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