A.I. Vlasenko, V.P. Veleschuk, M.P. Kisselyuk, Z.K. Vlasenko, I.O. Lyashenko, O.V. Lyashenko. Acoustic emission of the light emitting diodes (review)

5

A.V. Sukach, V.V. Tetyorkin, I.M. Matiyuk, A.I. Tkachuk. InAs photodiodes (review)

17

V.A. Dan’ko, I.Z. Indutnyy, M.V. Lukaniuk, V.I. Myn’ko, S.S. Ponomarjov, P.E. Shepeliavyi, V.O.Yukhymchuk. 

Photolithography on photostimulated reversible and transient structural changes in CHG

44

Ya.Ya. Kudryk. Methods for creation and properties of ohmic contacts to indium phosphide (rewiev)

58

P.I. Baranskii, G.P. Gaidar. Comparison of the electrophysical properties of silicon crystals doped with phosphorus through the melt and by using the method of nuclear transmutation

73

A.P. Paiuk, A.Yu. Meshalkin, A.V. Stronski, E.A. Achimova, S.A. Sergeev, V.G. Abashkin, O.S. Lytvyn, P.F. Oleksenko, A.M. Prisacar, G.M. Triduh, E.V. Senchenko. E-beam and holographic recording of surface relief structures by using the Ge₅As₃₇A₅₈–se multilayer nanostructures as registering media

79

S.P. Rudenko, M.O. Stetsenko, I.M. Krishchenko, L.S. Maksimenko, E.B. Kaganovich, B.K. Serdega. Diagnostic of localized surface plasmon resonances on porous gold films

87

G.P. Malanych, V.M. Tomashik, I.B. Stratiychuk, Z.F. Tomashik. Chemical etching of PbTe and Pb_1–xSn_xTe single crystals by using H₂O₂–HBr solutions with different initial HBr concentrations

94

E.V. Kostyukevich, S.A. Kostyukevich, A.A. Kudryavtsev, N.L. Moskalenko. Analysis of changes in optical characteristics of polycrystalline gold films under the influence of low-temperature annealing

102

V.A. Dan’ko, M.L. Dmytruk, I.Z. Indutnyy, S.V. Mamykin, V.I. Myn’ko, P.M. Lytvyn, M.V. Lukaniuk, P.E. Shepeliavyi. Formation of submicron periodic plasmon structures of large area by using the interference lithography method with vacuum photoresists

109

R.V. Khristosenko, Ye.V. Kostyukevich, Yu.V. Ushenin, A.V. Samoylov. Improvement of exploitation parameters of transducers based on surface plasmon resonance via optimization of optical parts in sensor devices of the “plasmon” type

117

V.F. Onyshchenko. Distribution of non-equilibrium charge carriers in macroporous silicon structure under conditions of their homogeneous generation over the simple bulk

125

S.V. Svechnikov. To the 50^th issue of “Optoelectronics and Semiconductor Technique”

132