The influence of acoustic-dislocation interaction on intensity of the bound exciton recombination in initial and irradiated GaAsP LEDs structures

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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dep-07-2017

The influence of acoustic-dislocation interaction on intensity of the bound exciton recombination in initial and irradiated GaAsP LEDs structures

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O.V.Konoreva, Ya. M.Olikh, M.B.Pinkovska, O.I.Radkevych, V.P.Tartachnyk, V.V.Shlapatska // Superlattices and Microstructures, Volume 102, 2017, Pages 88-93

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