Origin of the front-back-gate coupling in partially and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Origin of the front-back-gate coupling in partially and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate

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Lukyanchikova N., Garbar N., Smolanka A., Lokshin M., Simoen E., and Claeys C. //
J. Appl. Phys. – 2005. Vol. 98, № 12. P. 6812-6822.

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