Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13m fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

Search

You are here: Home

Research divisions

Publications

dep03

dep-03-before

Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13m fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

Details: Hits: 7598

N. Lukyanchikova, N. Garbar, A. Smolanka, E. Simoen, C. Claeys // Pros. of the 34th European Solid-State Device Research Conference ISSDERC 2004, pp. 357-360.

Search

Nav view search

Navigation