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V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine |
Research divisions Publications dep07 dep-07-before Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on sapphire substrateKladko, V. P. ; Kolomys, A. F. ; Slobodian, M. V. ; Strelchuk, V. V. ; Raycheva, V. G. ; Belyaev, A. E. ; Bukalov, S. S. ; Hardtdegen, H. ; Sydoruk, V. A. ; Klein, N. ; Vitusevich, S. A. // Journal of applied physics 105, 063515-1-9 (2009)
