- Details
- Hits: 3764
 |
V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine |
Search
Nav view search
Navigation
You are here: Home 
Research divisions Publications dep07-1 dep-07-2014-1 Characteristics of hydrogen effusion from the Si–H bonds in Si rich silicon oxynitride films for nanocrystal-line silicon based photovoltaic applications.
Research divisions Publications dep07-1 dep-07-2014-1 Characteristics of hydrogen effusion from the Si–H bonds in Si rich silicon oxynitride films for nanocrystal-line silicon based photovoltaic applications.