Impact of processing and back-gate biasing condition on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

You are here: Home

V. Kudina, N. Garbar, E. Simoen, C. Claeys.// Solid-State Electronics 105 (2015), pp 37–44.

Nav view search