Інститут фізики напівпровідників ім. В.Є. Лашкарьова НАН України
Національна академія наук України

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SILICON CARBIDE for semiconductor and ceramics

Special Design and Technology Bureau with Pilot Production ISP NASU

016
SILICON CARBIDE FOR SEMICONDUCTOR
Technology growing bars of semiconductor silicon carbide (SiC) by the method of physical transport of steams is developed.
016 2 POROUS SILICON CARBIDE CERAMICS
The technology of biomoph silicon carbide ceramics (SiC) based on the pyrolized wood. It is can be applied in medicine as implants.
Developments were conducted jointly with ISP NAS U.
1 - ceramics based on nut  wood,
 2 - ceramics based on beech wood,
3 - ceramics based on pear wood.
016 3 Silicon carbide ceramics (SiC) based on industrial carbon materials: carbon fibres, foamed carbon and carbon fabric.  It is can be applied in different spheres of industry as thermal insulation, heaters, catalyst carrier, filters and ect.