V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine


Semiconductor cooled infrared photodetector

№22 Department semiconductor infrared Photoelectronics
   V.V. Tetorkіn, L.F. Linnyk



The photodetector can be used for registration of laser radiation in the infrared wavelength range.
Principle of operation
As the photosensitive detector used photoresistor InSb. Stabilization of temperature is reached by means of Peltier refrigerator.
Areas of application
Semiconductor cooled infrared photodetector can be used in scientific investigations for detection of laser radiation, in medicine and thermal imaging technique. It is differ from the pyroelectric analogue by wide range of linearity.
Technical parameters
Semiconductor                              InSb
Wavelength range, μm                   2-6
Detectivity, D*, cm Hz1/2W-1            2×109
Time constant, μs                            1
Supply voltage, V                            9
Operating temperature, К                 195
Area of sensitive element, mm            1х1