V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine

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Blocking IR and transparent sub-THz and microwave filters

Sub-THz and microwave and sub-THz filters designed on  flexible polymer substrates to shield the influence of background IR radiation noise in sensitive low-temperature detectors. They can be applied for increase operation parameters of highly sensitive low-temperature detector assemblies in facilities like VLBI Global Observing Systems .

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Functional selective coatings blocking radiation in the infrared and passing in the microwave spectral range

Purpose - can be used as elements of filtering devices for:

  • decrease of an object detection in IR spectral range;
  • assurance of high level of desired informative signal in radio-frequency (2-36 GHz) and sub-THz spectral ranges (65+-10, 140+-1, 270+-10 GHz, the losses in these spectral ranges are <= 0.06-0.2 dB (<=1.4-4.6 %) at thicknesses of nanostructured  AlN coatings ~1-3 µm);

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Low-cost self-assembling technology for nano-electro-mechanical systems and ultra-fast emission source nanodevices

№11 Department of Electron probe methods of structural and elemental analysis of semiconductor materials and systems
   A. Klimovskaya

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Crystals of optical Germanium

№34 Development Division and fluctuation analysis of semiconductor materials and structures
   G.S. Pekar

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The method of doping and purification of crystals by electric drift

№3 The department of photoelectric phenomena
I.V. Markevich, N.O. Korsunska, L.V. Borkovska, L.Yu. Khomenkova

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ZnO, CdS, CdSe and CdTe bulk crystals

№3 The department of photoelectric phenomena
B.M. Bulakh

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Technology  for  porous  silicon  production

№3 The department of photoelectric phenomena
B.M. Bulakh, L.Yu. Khomenkova

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Technology bonding for sapphires units

Special Design and Technology Bureau with Pilot Production ISP NASU
Volodymyr Maslov

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Semiconductor silicon carbide technology

Special Design and Technology Bureau with Pilot Production ISP NASU

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Silicon carbide mirror

Special Design and Technology Bureau with Pilot Production ISP NASU
Volodymyr Maslov

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SILICON CARBIDE for semiconductor and ceramics

Special Design and Technology Bureau with Pilot Production ISP NASU

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Усовершенствованная технология производства точных оптических призм внешнего отображения

№27 Отдел физико-технологических основ сенсорного материаловедения
В.П. Маслов

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Sensors based on 2D macroporous silicon structures with surface-active nanocoatings

№20 Department of photonic semiconductor structures
L.A. Karachevtseva, F.F. Sizov, Yu.V. Goltvyansky , K.P. Konin, O.J. Stronska , K.A. Parshin , O.A. Lytvynenko

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Технология изготовления светоизлучающих кремниевых наноструктур

№14 Отдел фотохимических явлений в полупроводниках
И.З. Индутный

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Method  of doping chalcogenide semiconductor materials for thermoelectric energy converters

№ 17 Department for Problems of Defect Formation and Nonequilibrium Processes in Complex Semiconductors
A.I. Vlasenko, V.A. Gnatyuk, S.N. Levytskyi, M.I. Boiko, M.P. Kyselyuk, Ts.A. Krys’kov, A.A. Krys’kov

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Two-dimensional photonic macroporous silicon structures

№20 Department of photonic semiconductor structures
L.A. Karachevtseva, O.A. Lytvynenko, A.E. Glushko

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Highly effective adsorptive material for the gases of the type CH4, H2

№40 Thin-film electroluminescent Department of display units
   V.E. Rodіonov

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Реєструючі середовища на основі ХСН для виготовлення голограмних оптичних, кіноформних, дифракційних елементів, оптичних захисних елементів та оптичних дисків

№10 Відділ оптичних та оптоелектронних реєструючих середовищ     
С.О. Костюкевич, О.В.Стронський

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Method of doping and purification of II-VI crystals

№3 The department of photoelectric phenomena
M.K. Sheinkman, I.V. Markevich, N.O. Korsunska, L.Yu. Khomenkova, L.V. Borkovska

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Композитные тонкопленочные материалы для хеморезисторов и технология их изготовления

№16 Відділ оптоелектронних функціональних перетворювачів
 Д.А.Гринько, А.Л. Кукла

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Технологія виготовлення світловипромінюючих кремнієвих наноструктур

№14 Відділ фотохімічних явищ в напівпровідниках
І.З. Індутний

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