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Plyatsko S.V., Rashkovetskyi L.V. 201852(3):305-309 https://doi.org/10.1134/S1063782618030181
V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Plyatsko S.V., Rashkovetskyi L.V. 201852(3):305-309 https://doi.org/10.1134/S1063782618030181