V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine


1. D. Coquillat, V. Nodjiadjim, S. Blin, A. Konczykowska, N. Dyakonova, C. Consejo, P. Nouvel, A. Pènarier, J. Torres, D. But, S. Ruffenach, F. Teppe, M. Riet, A. Muraviev, A. Gutin, M. Shur, and W. Knap, “High-speed room temperature terahertz detectors based on InP double heterojunction bipolar transistors” / Int. J. High Speed Electron. Syst., vol. 25, no. 3–4, 2016.