Complete relaxation of internal mechanical stresses and improvement of the electronic parameters of the film and substrate in C60/Si heterosystems

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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MatveevaL.A., NelyubaP.L., KolyadinaE.Yu., KonakovaR.V., ShinkarenkoV.E., VengerE.F. International Journal of Hydrogen Energy – 2019 –44, No. 50 – P. 182-183.

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