Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Tamara Rudenko, Ran Yu, Sylvain Barraud, Karim Cherkaoui, and Alexey Nazarov, IEEE Electron Device Letters, vol. 34, N 8, pp.957-959 (2013)