Electron mobility in heavily doped junctionless nanowire SOI MOSFETs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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T. Rudenko, A. Nazarov, R. Yu, S. Barraud, K. Cherkaoui, P. Razavi, G. Fagas, vol.109, Microelectronic Engineering pp.326–329 (2013)