Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperatures

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

I.P. Tyagulskii, S.I. Tyagulskii, A.N. Nazarov, V.S. Lysenko, K. Cherkaoui, P.K. Hurley, Microelectronic Engineering vol.109, pp.31–34 (2013)

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