Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperatures

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

Search

Details: Hits: 6271

I.P. Tyagulskii, S.I. Tyagulskii, A.N. Nazarov, V.S. Lysenko, K. Cherkaoui, P.K. Hurley, Microelectronic Engineering vol.109, pp.31–34 (2013)