Charge trapping processes at memory window formation in single and double nanocrystal layered NVMs

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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V. A. Ievtukh, A. N. Nazarov, V. I. Turchanikov, V. S. Lysenko, A.Nassiopoulou// Microelectronic Engineering, vol.109, pp.5–9 (2013)