Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Andriy V. Vasin, Yukari Ishikawa, Norioshi Shibata, Jarno Salonen, and Vesa-Pekka Lehto, Japanese Journal of Applied Physics, Vol. 46, No.19, pp. L465-L467, (2007)

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