Charge storage peculiarities in poly-Si–SiO2–Si memory devices with Si nanocrystals rich SiO2

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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V.I. Turchanikov, A.N. Nazarov, V.S. Lysenko, Josep Carreras, B. Garrido, Microelectronics Reliability, vol.45, pp.903–906 (2005)