Charge trapping in Si-implanted SiO2-Si memory devices at high electric fields and elevated temperatures

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, J. Carreras and B. Garrido, Journal of Physics: Conference Series, vol. 10, pp.409–412 (2005)

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