Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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T. Rudenko, N. Collaert, S. De Gendt, V. Kilchytska, M. Jurczak, and D. Flandre, Microelectronic Engineering, vol.80, pp.386-389. (2005)