A revised reverse gated-diode technique for determining generation parameters in thin-film silicon-on-insulator devices and its application at high temperatures

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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T. Rudenko, V. Kilchytska, V. Dessard and D. Flandre, J. Appl. Phys, v 97, May, p. 093718-1-9. (2005)