Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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Gebel T., Rebohle L., Skorupa W., Nazarov A.N., Osiyuk I.N., and Lysenko V.S, Appl. Phys. Lett., 81, 2575-2576. (2002)