Border traps in 6H-SiC metal-oxide-semiconductor capacitors investigated by the thermally-stimulated current technique

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

H.Ö. Ólafsson, E.Ö. Sveinbjörnsson, T.E. Rudenko, I.P. Tyagulski, I.N. Osiyuk, V.S. Lysenko, Applied Physics Letters, v.79, N24, pp.4034-4036. (2001)

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