Border traps in 6H-SiC metal-oxide-semiconductor capacitors investigated by the thermally-stimulated current technique

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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H.Ö. Ólafsson, E.Ö. Sveinbjörnsson, T.E. Rudenko, I.P. Tyagulski, I.N. Osiyuk, V.S. Lysenko, Applied Physics Letters, v.79, N24, pp.4034-4036. (2001)