Characterization of SOІ by capacitance and current measurements with combined gated diode and depletion-mode MOSFET structure

V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine

National Academy of Sciences of Ukraine

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T.E. Rudenko, A.N. Rudenko, A.N. Nazarov and V. S. Lysenko, Microelectronic Engineering, vol. 28, pp. 475-478 (1995)